| 12389629 |
Source/drain regions in integrated circuit structures |
Cory E. Weber |
2025-08-12 |
|
| 12376353 |
Source/drain regions in integrated circuit structures |
Andy Wei, Guillaume Bouche |
2025-07-29 |
|
| 12342614 |
Asymmetric gate structures and contacts for stacked transistors |
Cheng-Ying Huang, Patrick Morrow, Arunshankar Venkataraman, Willy Rachmady, Nicole K. Thomas +2 more |
2025-06-24 |
|
| 12328936 |
Gate spacing in integrated circuit structures |
Guillaume Bouche, Andy Wei |
2025-06-10 |
|
| 12328864 |
3D 1T1C stacked dram structure and method to fabricate |
Aaron D. Lilak, Abhishek A. Sharma |
2025-06-10 |
|
| 12288803 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Anand S. Murthy +3 more |
2025-04-29 |
|
| 12211898 |
Device contact sizing in integrated circuit structures |
Guillaume Bouche, Andy Wei |
2025-01-28 |
|
| 12191349 |
Reducing off-state leakage in semiconductor devices |
Dipanjan Basu, Cory E. Weber, Justin R. Weber, Harold W. Kennel, Seung Hoon Sung +3 more |
2025-01-07 |
|
| 12142689 |
Transistor including wrap around source and drain contacts |
Abhishek A. Sharma, Gilbert Dewey, Jack T. Kavalieros, Van H. Le |
2024-11-12 |
$28,491,000 |
| 12100623 |
Vertically stacked finFETs and shared gate patterning |
Aaron D. Lilak, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea, Patrick Morrow +1 more |
2024-09-24 |
$33,787,000 |
| 12068319 |
High performance semiconductor oxide material channel regions for NMOS |
Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +3 more |
2024-08-20 |
$20,163,000 |
| 12009433 |
Multi-dielectric gate stack for crystalline thin film transistors |
Van H. Le, Inanc Meric, Gilbert Dewey, Abhishek A. Sharma, Miriam Reshotko +6 more |
2024-06-11 |
$21,221,000 |
| 11996447 |
Field effect transistors with gate electrode self-aligned to semiconductor fin |
Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more |
2024-05-28 |
$30,739,000 |
| 11984487 |
Non-planar transistor arrangements with asymmetric gate enclosures |
Guillaume Bouche |
2024-05-14 |
$33,809,000 |
| 11973121 |
Device contacts in integrated circuit structures |
Guillaume Bouche, Andy Wei, Mwilwa Tambwe, Piyush Mohan Sinha |
2024-04-30 |
$26,151,000 |
| 11929435 |
Ferroelectric gate stack for band-to-band tunneling reduction |
Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more |
2024-03-12 |
$37,196,000 |
| 11923410 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Anand S. Murthy +3 more |
2024-03-05 |
$29,696,000 |
| 11916106 |
Source/drain regions in integrated circuit structures |
Andy Wei, Guillaume Bouche |
2024-02-27 |
$28,450,000 |
| 11881517 |
Channel structures for thin-film transistors |
Abhishek A. Sharma, Cory E. Weber, Van H. Le |
2024-01-23 |
$52,361,000 |
| 11862730 |
Top-gate doped thin film transistor |
Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Gilbert Dewey |
2024-01-02 |
$30,016,000 |
| 11862729 |
Vertical multi-gate thin film transistors |
Yih Wang, Abhishek A. Sharma, Van H. Le |
2024-01-02 |
$30,016,000 |
| 11849572 |
3D 1T1C stacked DRAM structure and method to fabricate |
Aaron D. Lilak, Abhishek A. Sharma |
2023-12-19 |
$50,836,000 |
| 11784239 |
Subfin leakage suppression using fixed charge |
Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady, Gilbert Dewey +5 more |
2023-10-10 |
$20,947,000 |
| 11764275 |
Indium-containing fin of a transistor device with an indium-rich core |
Chandra S. Mohapatra, Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +4 more |
2023-09-19 |
$20,015,000 |
| 11756998 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more |
2023-09-12 |
$19,004,000 |
