Issued Patents All Time
Showing 25 most recent of 82 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12389629 | Source/drain regions in integrated circuit structures | Cory E. Weber | 2025-08-12 |
| 12376353 | Source/drain regions in integrated circuit structures | Andy Wei, Guillaume Bouche | 2025-07-29 |
| 12342614 | Asymmetric gate structures and contacts for stacked transistors | Cheng-Ying Huang, Patrick Morrow, Arunshankar Venkataraman, Willy Rachmady, Nicole K. Thomas +2 more | 2025-06-24 |
| 12328864 | 3D 1T1C stacked dram structure and method to fabricate | Aaron D. Lilak, Abhishek A. Sharma | 2025-06-10 |
| 12328936 | Gate spacing in integrated circuit structures | Guillaume Bouche, Andy Wei | 2025-06-10 |
| 12288803 | Transistor with isolation below source and drain | Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Anand S. Murthy +3 more | 2025-04-29 |
| 12211898 | Device contact sizing in integrated circuit structures | Guillaume Bouche, Andy Wei | 2025-01-28 |
| 12191349 | Reducing off-state leakage in semiconductor devices | Dipanjan Basu, Cory E. Weber, Justin R. Weber, Harold W. Kennel, Seung Hoon Sung +3 more | 2025-01-07 |
| 12142689 | Transistor including wrap around source and drain contacts | Abhishek A. Sharma, Gilbert Dewey, Jack T. Kavalieros, Van H. Le | 2024-11-12 |
| 12100623 | Vertically stacked finFETs and shared gate patterning | Aaron D. Lilak, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea, Patrick Morrow +1 more | 2024-09-24 |
| 12068319 | High performance semiconductor oxide material channel regions for NMOS | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +3 more | 2024-08-20 |
| 12009433 | Multi-dielectric gate stack for crystalline thin film transistors | Van H. Le, Inanc Meric, Gilbert Dewey, Abhishek A. Sharma, Miriam Reshotko +6 more | 2024-06-11 |
| 11996447 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more | 2024-05-28 |
| 11984487 | Non-planar transistor arrangements with asymmetric gate enclosures | Guillaume Bouche | 2024-05-14 |
| 11973121 | Device contacts in integrated circuit structures | Guillaume Bouche, Andy Wei, Mwilwa Tambwe, Piyush Mohan Sinha | 2024-04-30 |
| 11929435 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more | 2024-03-12 |
| 11923410 | Transistor with isolation below source and drain | Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Anand S. Murthy +3 more | 2024-03-05 |
| 11916106 | Source/drain regions in integrated circuit structures | Andy Wei, Guillaume Bouche | 2024-02-27 |
| 11881517 | Channel structures for thin-film transistors | Abhishek A. Sharma, Cory E. Weber, Van H. Le | 2024-01-23 |
| 11862730 | Top-gate doped thin film transistor | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Gilbert Dewey | 2024-01-02 |
| 11862729 | Vertical multi-gate thin film transistors | Yih Wang, Abhishek A. Sharma, Van H. Le | 2024-01-02 |
| 11849572 | 3D 1T1C stacked DRAM structure and method to fabricate | Aaron D. Lilak, Abhishek A. Sharma | 2023-12-19 |
| 11784239 | Subfin leakage suppression using fixed charge | Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady, Gilbert Dewey +5 more | 2023-10-10 |
| 11764275 | Indium-containing fin of a transistor device with an indium-rich core | Chandra S. Mohapatra, Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +4 more | 2023-09-19 |
| 11756998 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more | 2023-09-12 |