| 12342611 |
Source or drain structures with vertical trenches |
Ryan Keech, Anand S. Murthy, Aaron A. Budrevich, Peter Wells |
2025-06-24 |
| 12288808 |
High aspect ratio source or drain structures with abrupt dopant profile |
Ryan Keech, Anand S. Murthy, Suresh Vishwanath, Mohammad HASAN, Biswajeet Guha +1 more |
2025-04-29 |
| 12288803 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma, Anand S. Murthy +3 more |
2025-04-29 |
| 12224337 |
PGaN enhancement mode HEMTs with dopant diffusion spacer |
Michael Beumer, Robert Ehlert, Michael Robinson, Patrick Wallace, Peter Wells |
2025-02-11 |
| 12094881 |
Arsenic-doped epitaxial source/drain regions for NMOS |
Anand S. Murthy, Ryan Keech, Ritesh Jhaveri |
2024-09-17 |
| 11935887 |
Source or drain structures with vertical trenches |
Ryan Keech, Anand S. Murthy, Aaron A. Budrevich, Peter Wells |
2024-03-19 |
| 11923410 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma, Anand S. Murthy +3 more |
2024-03-05 |
| 11804523 |
High aspect ratio source or drain structures with abrupt dopant profile |
Ryan Keech, Anand S. Murthy, Suresh Vishwanath, Mohammad HASAN, Biswajeet Guha +1 more |
2023-10-31 |
| 11756998 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more |
2023-09-12 |
| 11695081 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Sean T. Ma, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy +4 more |
2023-07-04 |
| 11610889 |
Arsenic-doped epitaxial, source/drain regions for NMOS |
Anand S. Murthy, Ryan Keech, Ritesh Jhaveri |
2023-03-21 |
| 11557658 |
Transistors with high density channel semiconductor over dielectric material |
Gilbert Dewey, Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang +3 more |
2023-01-17 |
| 11552169 |
Source or drain structures with phosphorous and arsenic co-dopants |
Anand S. Murthy, Ryan Keech, Suresh Vishwanath |
2023-01-10 |
| 11508577 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Cheng-Ying Huang +4 more |
2022-11-22 |
| 11355621 |
Non-planar semiconductor device including a replacement channel structure |
Gilbert Dewey, Willy Rachmady, Sean T. Ma, Tahir Ghani, Matthew V. Metz +2 more |
2022-06-07 |
| 11276694 |
Transistor structure with indium phosphide channel |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Cheng-Ying Huang, Jack T. Kavalieros +2 more |
2022-03-15 |
| 11257904 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more |
2022-02-22 |
| 11171207 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma, Anand S. Murthy +3 more |
2021-11-09 |
| 11164974 |
Channel layer formed in an art trench |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nancy Zelick, Harold W. Kennel +1 more |
2021-11-02 |
| 11164747 |
Group III-V semiconductor devices having asymmetric source and drain structures |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Cheng-Ying Huang +3 more |
2021-11-02 |
| 11049773 |
Art trench spacers to enable fin release for non-lattice matched channels |
Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more |
2021-06-29 |