Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12342611 | Source or drain structures with vertical trenches | Ryan Keech, Nicholas G. Minutillo, Anand S. Murthy, Peter Wells | 2025-06-24 |
| 11935887 | Source or drain structures with vertical trenches | Ryan Keech, Nicholas G. Minutillo, Anand S. Murthy, Peter Wells | 2024-03-19 |
| 11735630 | Integrated circuit structures with source or drain dopant diffusion blocking layers | Cory Bomberger, Anand S. Murthy, Anupama Bowonder, Tahir Ghani | 2023-08-22 |
| 11264453 | Methods of doping fin structures of non-planar transistor devices | Cory E. Weber, Aaron D. Lilak, Szuya S. Liao | 2022-03-01 |
| 11222947 | Methods of doping fin structures of non-planar transistor devices | Cory E. Weber, Aaron D. Lilak, Szuya S. Liao | 2022-01-11 |
| 10896852 | Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same | Scott B. Clendenning, Martin M. Mitan | 2021-01-19 |
| 10896907 | Retrograde transistor doping by heterojunction materials | Patrick H. Keys, Hei Kam, Rishabh Mehandru | 2021-01-19 |
| 10847653 | Semiconductor device having metallic source and drain regions | Martin D. Giles, Annalisa Cappellani, Sanaz K. Gardner, Rafael Rios, Cory E. Weber | 2020-11-24 |
| 10008565 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French | 2018-06-26 |
| 9691848 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French | 2017-06-27 |
| 9583487 | Semiconductor device having metallic source and drain regions | Martin D. Giles, Annalisa Cappellani, Sanaz Kabehie, Rafael Rios, Cory E. Weber | 2017-02-28 |
| 9490329 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French | 2016-11-08 |
| 9159787 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French | 2015-10-13 |
| 8748940 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French | 2014-06-10 |
| 8394694 | Reliability of high-K gate dielectric layers | Adrien LaVoie, Ashutosh Ashutosh, Huicheng Chang | 2013-03-12 |
| 8258627 | Group II element alloys for protecting metal interconnects | Adrien LaVoie | 2012-09-04 |
| 8222746 | Noble metal barrier layers | Adrien LaVoie, Juan E. Dominguez | 2012-07-17 |
| 7842983 | Boundaries with elevated deuterium levels | Ashutosh Ashutosh, Huicheng Chang, Adrien LaVoie | 2010-11-30 |
| 7790536 | Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures | Mantu K. Hudait, Dmitri Loubychev, Jack T. Kavalieros, Suman Datta, Joel M. Fastenau +1 more | 2010-09-07 |
| 7759241 | Group II element alloys for protecting metal interconnects | Adrien LaVoie | 2010-07-20 |
| 7601980 | Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures | Mantu K. Hudait, Dmitri Loubychev, Jack T. Kavalieros, Suman Datta, Joel M. Fastenau +1 more | 2009-10-13 |