| 12342611 |
Source or drain structures with vertical trenches |
Ryan Keech, Nicholas G. Minutillo, Anand S. Murthy, Peter Wells |
2025-06-24 |
|
| 11935887 |
Source or drain structures with vertical trenches |
Ryan Keech, Nicholas G. Minutillo, Anand S. Murthy, Peter Wells |
2024-03-19 |
$28,784,000 |
| 11735630 |
Integrated circuit structures with source or drain dopant diffusion blocking layers |
Cory Bomberger, Anand S. Murthy, Anupama Bowonder, Tahir Ghani |
2023-08-22 |
$16,803,000 |
| 11264453 |
Methods of doping fin structures of non-planar transistor devices |
Cory E. Weber, Aaron D. Lilak, Szuya S. Liao |
2022-03-01 |
$16,941,000 |
| 11222947 |
Methods of doping fin structures of non-planar transistor devices |
Cory E. Weber, Aaron D. Lilak, Szuya S. Liao |
2022-01-11 |
$33,310,000 |
| 10896852 |
Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same |
Scott B. Clendenning, Martin M. Mitan |
2021-01-19 |
$115,732,000 |
| 10896907 |
Retrograde transistor doping by heterojunction materials |
Patrick H. Keys, Hei Kam, Rishabh Mehandru |
2021-01-19 |
$115,732,000 |
| 10847653 |
Semiconductor device having metallic source and drain regions |
Martin D. Giles, Annalisa Cappellani, Sanaz K. Gardner, Rafael Rios, Cory E. Weber |
2020-11-24 |
$25,522,000 |
| 10008565 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French |
2018-06-26 |
$24,418,000 |
| 9691848 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French |
2017-06-27 |
$7,334,000 |
| 9583487 |
Semiconductor device having metallic source and drain regions |
Martin D. Giles, Annalisa Cappellani, Sanaz Kabehie, Rafael Rios, Cory E. Weber |
2017-02-28 |
$9,011,000 |
| 9490329 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French |
2016-11-08 |
$9,907,000 |
| 9159787 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French |
2015-10-13 |
$14,687,000 |
| 8748940 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French |
2014-06-10 |
$19,303,000 |
| 8394694 |
Reliability of high-K gate dielectric layers |
Adrien LaVoie, Ashutosh Ashutosh, Huicheng Chang |
2013-03-12 |
$18,179,000 |
| 8258627 |
Group II element alloys for protecting metal interconnects |
Adrien LaVoie |
2012-09-04 |
$13,616,000 |
| 8222746 |
Noble metal barrier layers |
Adrien LaVoie, Juan E. Dominguez |
2012-07-17 |
$15,167,000 |
| 7842983 |
Boundaries with elevated deuterium levels |
Ashutosh Ashutosh, Huicheng Chang, Adrien LaVoie |
2010-11-30 |
$13,201,000 |
| 7790536 |
Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures |
Mantu K. Hudait, Dmitri Loubychev, Jack T. Kavalieros, Suman Datta, Joel M. Fastenau +1 more |
2010-09-07 |
$9,640,000 |
| 7759241 |
Group II element alloys for protecting metal interconnects |
Adrien LaVoie |
2010-07-20 |
$9,455,000 |
| 7601980 |
Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures |
Mantu K. Hudait, Dmitri Loubychev, Jack T. Kavalieros, Suman Datta, Joel M. Fastenau +1 more |
2009-10-13 |
$21,403,000 |
