AB

Aaron A. Budrevich

IN Intel: 21 patents #1,904 of 30,777Top 7%
Overall (All Time): #202,322 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12342611 Source or drain structures with vertical trenches Ryan Keech, Nicholas G. Minutillo, Anand S. Murthy, Peter Wells 2025-06-24
11935887 Source or drain structures with vertical trenches Ryan Keech, Nicholas G. Minutillo, Anand S. Murthy, Peter Wells 2024-03-19
11735630 Integrated circuit structures with source or drain dopant diffusion blocking layers Cory Bomberger, Anand S. Murthy, Anupama Bowonder, Tahir Ghani 2023-08-22
11264453 Methods of doping fin structures of non-planar transistor devices Cory E. Weber, Aaron D. Lilak, Szuya S. Liao 2022-03-01
11222947 Methods of doping fin structures of non-planar transistor devices Cory E. Weber, Aaron D. Lilak, Szuya S. Liao 2022-01-11
10896852 Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same Scott B. Clendenning, Martin M. Mitan 2021-01-19
10896907 Retrograde transistor doping by heterojunction materials Patrick H. Keys, Hei Kam, Rishabh Mehandru 2021-01-19
10847653 Semiconductor device having metallic source and drain regions Martin D. Giles, Annalisa Cappellani, Sanaz K. Gardner, Rafael Rios, Cory E. Weber 2020-11-24
10008565 Semiconductor devices with germanium-rich active layers and doped transition layers Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French 2018-06-26
9691848 Semiconductor devices with germanium-rich active layers and doped transition layers Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French 2017-06-27
9583487 Semiconductor device having metallic source and drain regions Martin D. Giles, Annalisa Cappellani, Sanaz Kabehie, Rafael Rios, Cory E. Weber 2017-02-28
9490329 Semiconductor devices with germanium-rich active layers and doped transition layers Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French 2016-11-08
9159787 Semiconductor devices with germanium-rich active layers and doped transition layers Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French 2015-10-13
8748940 Semiconductor devices with germanium-rich active layers and doped transition layers Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French 2014-06-10
8394694 Reliability of high-K gate dielectric layers Adrien LaVoie, Ashutosh Ashutosh, Huicheng Chang 2013-03-12
8258627 Group II element alloys for protecting metal interconnects Adrien LaVoie 2012-09-04
8222746 Noble metal barrier layers Adrien LaVoie, Juan E. Dominguez 2012-07-17
7842983 Boundaries with elevated deuterium levels Ashutosh Ashutosh, Huicheng Chang, Adrien LaVoie 2010-11-30
7790536 Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures Mantu K. Hudait, Dmitri Loubychev, Jack T. Kavalieros, Suman Datta, Joel M. Fastenau +1 more 2010-09-07
7759241 Group II element alloys for protecting metal interconnects Adrien LaVoie 2010-07-20
7601980 Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures Mantu K. Hudait, Dmitri Loubychev, Jack T. Kavalieros, Suman Datta, Joel M. Fastenau +1 more 2009-10-13