| 11817438 |
System in package with interconnected modules |
Hyoung Il Kim, Bilal Khalaf, John G. Meyers |
2023-11-14 |
|
| 11694987 |
Active package substrate having anisotropic conductive layer |
Hyoung Il Kim |
2023-07-04 |
|
| 11145632 |
High density die package configuration on system boards |
Hyoung Il Kim, Bilal Khalaf, John G. Meyers |
2021-10-12 |
$32,982,000 |
| 10790257 |
Active package substrate having anisotropic conductive layer |
Hyoung Il Kim |
2020-09-29 |
$31,444,000 |
| 10497669 |
Hybrid die stacking |
Hyoung Il Kim |
2019-12-03 |
$19,496,000 |
| 8425987 |
Surface charge enhanced atomic layer deposition of pure metallic films |
Adrien LaVoie, John J. Plombon, Harsono S. Simka |
2013-04-23 |
$13,399,000 |
| 8344352 |
Using unstable nitrides to form semiconductor structures |
Adrien LaVoie, John J. Plombon, Joseph H. Han, Harsono S. Simka |
2013-01-01 |
|
| 8319287 |
Tunable gate electrode work function material for transistor applications |
Adrien LaVoie, Valery M. Dubin, John J. Plombon, Harsono S. Simka, Joseph H. Han +1 more |
2012-11-27 |
$12,455,000 |
| 8222746 |
Noble metal barrier layers |
Adrien LaVoie, Aaron A. Budrevich |
2012-07-17 |
$15,167,000 |
| 7982204 |
Using unstable nitrides to form semiconductor structures |
Adrien LaVoie, John J. Plombon, Joseph H. Han, Harsono S. Simka |
2011-07-19 |
$15,862,000 |
| 7964746 |
Copper precursors for CVD/ALD/digital CVD of copper metal films |
Tianniu Chen, Chongying Xu, Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder +2 more |
2011-06-21 |
$3,758,000 |
| 7964174 |
Nanotube growth and device formation |
Valery M. Dubin, Chin-Chang Cheng |
2011-06-21 |
$21,235,000 |
| 7858525 |
Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill |
Adrien LaVoie, John J. Plombon, Joseph H. Han, Harsono S. Simka, Bryan C. Hendrix +1 more |
2010-12-28 |
$20,720,000 |
| 7851360 |
Organometallic precursors for seed/barrier processes and methods thereof |
Adrien LaVoie, John J. Plombon, Joseph H. Han, Harsono S. Simka, David Thompson +1 more |
2010-12-14 |
$13,117,000 |
| 7749906 |
Using unstable nitrides to form semiconductor structures |
Adrien LaVoie, John J. Plombon, Joseph H. Han, Harsono S. Simka |
2010-07-06 |
$9,424,000 |
| 7704895 |
Deposition method for high-k dielectric materials |
Adrien LaVoie, John J. Plombon, Harsono S. Simka, Mansour Moinpour |
2010-04-27 |
$12,857,000 |
| 7687225 |
Optical coatings |
Sergei Koveshnikov, Kyle Flanigan, Ernisse Putna |
2010-03-30 |
$14,203,000 |
| 7687911 |
Silicon-alloy based barrier layers for integrated circuit metal interconnects |
Adrien LaVoie |
2010-03-30 |
$14,203,000 |
| 7682891 |
Tunable gate electrode work function material for transistor applications |
Adrien LaVoie, Valery M. Dubin, John J. Plombon, Harsono S. Simka, Joseph H. Han +1 more |
2010-03-23 |
$13,395,000 |
| 7635503 |
Composite metal films and carbon nanotube fabrication |
Valery M. Dubin, Florian Gstrein, Michael Goldstein |
2009-12-22 |
$32,780,000 |
| 7625817 |
Method of fabricating a carbon nanotube interconnect structures |
Florian Gstrein, Valery M. Dubin, Adrien LaVoie |
2009-12-01 |
$24,844,000 |
| 7550385 |
Amine-free deposition of metal-nitride films |
Adrien LaVoie, Valery M. Dubin, Kevin P. O'Brien, Steven W. Johnston, John D. Peck +2 more |
2009-06-23 |
$19,334,000 |
| 7507521 |
Silicon based optically degraded arc for lithographic patterning |
Kyle Flanigan, Sergei Koveshnikov, Ernisse Putna |
2009-03-24 |
$27,396,000 |
| 7476615 |
Deposition process for iodine-doped ruthenium barrier layers |
Joseph H. Han, Harsono S. Simka, Adrien LaVoie, John J. Plombon |
2009-01-13 |
$20,447,000 |
| 7459392 |
Noble metal barrier and seed layer for semiconductors |
Steven W. Johnston, Michael L. McSwiney |
2008-12-02 |
$16,850,000 |
