JH

Joseph H. Han

IN Intel: 9 patents #4,428 of 30,777Top 15%
Google: 2 patents #10,498 of 22,993Top 50%
Overall (All Time): #335,863 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12394360 Architecture for light emitting elements in a light field display Gang He, Richard P. Schneider, Andrew Victor Jones, James Richard Dodd, Jr. 2025-08-19
11694605 Architecture for light emitting elements in a light field display Gang He, Richard P. Schneider, Andrew Victor Jones, James Richard Dodd, Jr. 2023-07-04
11368671 Partial light field display architecture Gang He, Richard P. Schneider, Andrew Victor Jones, James Richard Dodd, Jr. 2022-06-21
11100844 Architecture for light emitting elements in a light field display Gang He, Richard P. Schneider, Andrew Victor Jones, James Richard Dodd, Jr. 2021-08-24
10999573 Partial light field display architecture Gang He, Richard P. Schneider, Andrew Victor Jones, James Richard Dodd, Jr. 2021-05-04
8344352 Using unstable nitrides to form semiconductor structures Juan E. Dominguez, Adrien LaVoie, John J. Plombon, Harsono S. Simka 2013-01-01
8319287 Tunable gate electrode work function material for transistor applications Adrien LaVoie, Valery M. Dubin, John J. Plombon, Juan E. Dominguez, Harsono S. Simka +1 more 2012-11-27
7982204 Using unstable nitrides to form semiconductor structures Juan E. Dominguez, Adrien LaVoie, John J. Plombon, Harsono S. Simka 2011-07-19
7858525 Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill Juan E. Dominguez, Adrien LaVoie, John J. Plombon, Harsono S. Simka, Bryan C. Hendrix +1 more 2010-12-28
7851360 Organometallic precursors for seed/barrier processes and methods thereof Juan E. Dominguez, Adrien LaVoie, John J. Plombon, Harsono S. Simka, David Thompson +1 more 2010-12-14
7749906 Using unstable nitrides to form semiconductor structures Juan E. Dominguez, Adrien LaVoie, John J. Plombon, Harsono S. Simka 2010-07-06
7682891 Tunable gate electrode work function material for transistor applications Adrien LaVoie, Valery M. Dubin, John J. Plombon, Juan E. Dominguez, Harsono S. Simka +1 more 2010-03-23
7476615 Deposition process for iodine-doped ruthenium barrier layers Harsono S. Simka, Adrien LaVoie, Juan E. Dominguez, John J. Plombon 2009-01-13
7354849 Catalytically enhanced atomic layer deposition process John J. Plombon, Adrien LaVoie, Juan E. Dominguez, Harsono S. Simka 2008-04-08