Issued Patents All Time
Showing 1–25 of 109 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10895010 | Solid precursor-based delivery of fluid utilizing controlled solids morphology | John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn K. Naito, Scott L. Battle +2 more | 2021-01-19 |
| 10280186 | Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials | Xiao MA, Tzuhn-Yan Lin, Dongsheng Xu, Yuqiang DING | 2019-05-07 |
| 10043658 | Precursors for silicon dioxide gap fill | William Hunks, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li | 2018-08-07 |
| 9783558 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films | Ziyun Wang, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum | 2017-10-10 |
| 9534285 | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films | Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum | 2017-01-03 |
| 9537095 | Tellurium compounds useful for deposition of tellurium containing materials | Matthias Stender, Tianniu Chen, William Hunks, Philip S. H. Chen, Jeffrey F. Roeder +1 more | 2017-01-03 |
| 9373677 | Doping of ZrO2 for DRAM applications | Julie Cissell, Thomas M. Cameron, William Hunks, David W. Peters | 2016-06-21 |
| 9337054 | Precursors for silicon dioxide gap fill | William Hunks, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li | 2016-05-10 |
| 9269582 | Cluster ion implantation of arsenic and phosphorus | Oleg Byl, William Hunks, Richard S. Ray | 2016-02-23 |
| 9219232 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | William Hunks, Tianniu Chen, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender +3 more | 2015-12-22 |
| 9102693 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films | Ziyun Wang, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum | 2015-08-11 |
| 9034688 | Antimony compounds useful for deposition of antimony-containing materials | Tianniu Chen, William Hunks, Philip S. H. Chen, Leah Maylott | 2015-05-19 |
| 8877549 | Low temperature deposition of phase change memory materials | Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, William Hunks +2 more | 2014-11-04 |
| 8821640 | Solid precursor-based delivery of fluid utilizing controlled solids morphology | John M. Cleary, Jose I. Arno, Bryan C. Hendrix, Donn K. Naito, Scott L. Battle +2 more | 2014-09-02 |
| 8802882 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films | Ziyun Wang, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum | 2014-08-12 |
| 8796068 | Tellurium compounds useful for deposition of tellurium containing materials | Matthias Stender, Tianniu Chen, William Hunks, Philip S. H. Chen, Jeffrey F. Roeder +1 more | 2014-08-05 |
| 8784936 | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films | Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum | 2014-07-22 |
| 8709863 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | William Hunks, Tianniu Chen, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender +3 more | 2014-04-29 |
| 8679894 | Low temperature deposition of phase change memory materials | Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, William Hunks +2 more | 2014-03-25 |
| 8674127 | Antimony compounds useful for deposition of antimony-containing materials | Tianniu Chen, William Hunks, Philip S. H. Chen, Leah Maylott | 2014-03-18 |
| 8663735 | In situ generation of RuO4 for ALD of Ru and Ru related materials | Weimin Li, Thomas M. Cameron | 2014-03-04 |
| 8574675 | Method and composition for depositing ruthenium with assistive metal species | Jorge A. Lubguban, Thomas M. Cameron, Weimin Li | 2013-11-05 |
| 8541318 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same | Ziyun Wang, Thomas H. Baum | 2013-09-24 |
| 8524931 | Precursor compositions for ALD/CVD of group II ruthenate thin films | Bryan C. Hendrix, Thomas M. Cameron, Jeffrey F. Roeder, Matthias Stender, Tianniu Chen | 2013-09-03 |
| 8455049 | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition | Thomas M. Cameron | 2013-06-04 |