| 11476158 |
Cobalt deposition selectivity on copper and dielectrics |
Philip S. H. Chen, Steven Lippy, Ruben Lieten |
2022-10-18 |
| 10870921 |
Cyclopentadienyl titanium alkoxides with ozone activated ligands for ALD of TiO2 |
Thomas M. Cameron |
2020-12-22 |
| 10043658 |
Precursors for silicon dioxide gap fill |
Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li |
2018-08-07 |
| 9637395 |
Fluorine free tungsten ALD/CVD process |
Weimin Li, David W. Peters, Scott L. Battle |
2017-05-02 |
| 9537095 |
Tellurium compounds useful for deposition of tellurium containing materials |
Matthias Stender, Chongying Xu, Tianniu Chen, Philip S. H. Chen, Jeffrey F. Roeder +1 more |
2017-01-03 |
| 9373677 |
Doping of ZrO2 for DRAM applications |
Julie Cissell, Chongying Xu, Thomas M. Cameron, David W. Peters |
2016-06-21 |
| 9337054 |
Precursors for silicon dioxide gap fill |
Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Steven M. Bilodeau, Weimin Li |
2016-05-10 |
| 9269582 |
Cluster ion implantation of arsenic and phosphorus |
Oleg Byl, Chongying Xu, Richard S. Ray |
2016-02-23 |
| 9219232 |
Antimony and germanium complexes useful for CVD/ALD of metal thin films |
Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender +3 more |
2015-12-22 |
| 9034688 |
Antimony compounds useful for deposition of antimony-containing materials |
Tianniu Chen, Philip S. H. Chen, Chongying Xu, Leah Maylott |
2015-05-19 |
| 8877549 |
Low temperature deposition of phase change memory materials |
Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu +2 more |
2014-11-04 |
| 8796068 |
Tellurium compounds useful for deposition of tellurium containing materials |
Matthias Stender, Chongying Xu, Tianniu Chen, Philip S. H. Chen, Jeffrey F. Roeder +1 more |
2014-08-05 |
| 8709863 |
Antimony and germanium complexes useful for CVD/ALD of metal thin films |
Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender +3 more |
2014-04-29 |
| 8679894 |
Low temperature deposition of phase change memory materials |
Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu +2 more |
2014-03-25 |
| 8674127 |
Antimony compounds useful for deposition of antimony-containing materials |
Tianniu Chen, Philip S. H. Chen, Chongying Xu, Leah Maylott |
2014-03-18 |
| 8288198 |
Low temperature deposition of phase change memory materials |
Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu +2 more |
2012-10-16 |
| 8268665 |
Antimony and germanium complexes useful for CVD/ALD of metal thin films |
Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender +3 more |
2012-09-18 |
| 8093140 |
Amorphous Ge/Te deposition process |
Philip S. H. Chen, Tianniu Chen, Matthias Stender, Chongying Xu, Jeffrey F. Roeder +1 more |
2012-01-10 |
| 8053375 |
Super-dry reagent compositions for formation of ultra low k films |
Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Steven M. Bilodeau, Scott L. Battle +1 more |
2011-11-08 |
| 8008117 |
Antimony and germanium complexes useful for CVD/ALD of metal thin films |
Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska +4 more |
2011-08-30 |
| 7838329 |
Antimony and germanium complexes useful for CVD/ALD of metal thin films |
Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska +4 more |
2010-11-23 |