| 11626519 |
Fabrication of non-planar IGZO devices for improved electrostatics |
Van H. Le, Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic +4 more |
2023-04-11 |
| 11450527 |
Engineering tensile strain buffer in art for high quality Ge channel |
Van H. Le, Benjamin Chu-Kung, Willy Rachmady, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2022-09-20 |
| 10847656 |
Fabrication of non-planar IGZO devices for improved electrostatics |
Van H. Le, Gilbert Dewey, Rafael Rios, Jack T. Kavalieros, Marko Radosavljevic +4 more |
2020-11-24 |
| 10249742 |
Offstate parasitic leakage reduction for tunneling field effect transistors |
Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Matthew V. Metz +8 more |
2019-04-02 |
| 10008565 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Aaron A. Budrevich |
2018-06-26 |
| 9691848 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Aaron A. Budrevich |
2017-06-27 |
| 9490329 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Aaron A. Budrevich |
2016-11-08 |
| 9159787 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Aaron A. Budrevich |
2015-10-13 |
| 8785907 |
Epitaxial film growth on patterned substrate |
Niti Goel, Niloy Mukherjee, Seung Hoon Sung, Van H. Le, Matthew V. Metz +11 more |
2014-07-22 |
| 8748940 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Aaron A. Budrevich |
2014-06-10 |