Issued Patents All Time
Showing 1–25 of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| RE50222 | Non-planar gate all-around device and method of fabrication thereof | Willy Rachmady, Ravi Pillarisetty, Van H. Le, Jack T. Kavaileros, Robert S. Chau | 2024-11-26 |
| 11894465 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros +5 more | 2024-02-06 |
| 10950733 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros +5 more | 2021-03-16 |
| 10553425 | Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD | Naomi Yoshida, Mei Chang, Mary Edmonds, Andrew C. Kummel, Sang Wook Park +1 more | 2020-02-04 |
| 10418487 | Non-planar gate all-around device and method of fabrication thereof | Willy Rachmady, Ravi Pillarisetty, Van H. Le, Jack T. Kavalieros, Robert S. Chau | 2019-09-17 |
| 10373824 | CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials | Andrew C. Kummel, Mary Edmonds, Mei Chang | 2019-08-06 |
| 10366878 | Selective deposition through formation of self-assembled monolayers | Tobin Kaufman-Osborn, David Thompson | 2019-07-30 |
| 10262858 | Surface functionalization and passivation with a control layer | Naomi Yoshida, Lin Dong, Andrew C. Kummel, Mary Edmonds, Steve Wolf | 2019-04-16 |
| 10199215 | Apparatus and method for selective deposition | Abhishek Dube, Schubert S. Chu, David Thompson, Jeffrey W. Anthis | 2019-02-05 |
| 10026845 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros +5 more | 2018-07-17 |
| 10008565 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marc C. French, Aaron A. Budrevich | 2018-06-26 |
| 9896326 | FCVD line bending resolution by deposition modulation | Jingmei Liang, Kiran V. Thadani, Nagarajan Rajagopalan | 2018-02-20 |
| 9824889 | CVD silicon monolayer formation method and gate oxide ALD formation on III-V materials | Andrew C. Kummel, Mary Edmonds, Mei Chang | 2017-11-21 |
| 9773663 | Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD | Naomi Yoshida, Mei Chang, Mary Edmonds, Andrew C. Kummel, Sang Wook Park +1 more | 2017-09-26 |
| 9768013 | Apparatus and method for selective deposition | Abhishek Dube, Schubert S. Chu, David Thompson, Jeffrey W. Anthis | 2017-09-19 |
| 9711366 | Selective etch for metal-containing materials | Nitin K. Ingle, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W. Anthis | 2017-07-18 |
| 9691848 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marc C. French, Aaron A. Budrevich | 2017-06-27 |
| 9685325 | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD | Mark Saly, David Thompson | 2017-06-20 |
| 9640671 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros +5 more | 2017-05-02 |
| 9490329 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marc C. French, Aaron A. Budrevich | 2016-11-08 |
| 9472417 | Plasma-free metal etch | Nitin K. Ingle, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W. Anthis | 2016-10-18 |
| 9337291 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros +5 more | 2016-05-10 |
| 9299582 | Selective etch for metal-containing materials | Nitin K. Ingle, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W. Anthis | 2016-03-29 |
| 9252275 | Non-planar gate all-around device and method of fabrication thereof | Willy Rachmady, Ravi Pillarisetty, Van Hoa Lee, Jack T. Kavalieros, Robert S. Chau | 2016-02-02 |
| 9159787 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marc C. French, Aaron A. Budrevich | 2015-10-13 |