Issued Patents All Time
Showing 1–25 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12315733 | Enhanced etch selectivity using halides | David Knapp, Feng Qiao, Hailong Zhou, Junkai He, Qian Fu +2 more | 2025-05-27 |
| 12261049 | Selective etch of a substrate | David Thompson, Bhaskar Jyoti Bhuyan, Mark Saly, Lisa J. Enman, Aaron Dangerfield +2 more | 2025-03-25 |
| 12018363 | Gap-fill with aluminum-containing films | Mark Saly, Lakmal C. Kalutarage, Tatsuya Sato | 2024-06-25 |
| 11946135 | Low temperature deposition of iridium containing films | Feng Q. Liu, Hua Chung, Schubert S. Chu, Mei Chang, David Thompson | 2024-04-02 |
| 11894233 | Electronic device having an oxygen free platinum group metal film | Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu +3 more | 2024-02-06 |
| 11821070 | Ruthenium film deposition using low valent metal precursors | Nasrin Kazem, Muthukumar Kaliappan, Michael Haverty | 2023-11-21 |
| 11697879 | Methods for depositing sacrificial coatings on aerospace components | Sukti Chatterjee, Kenichi Ohno, Lance A. Scudder, Yuriy Melnik, David Alexander BRITZ +3 more | 2023-07-11 |
| 11643721 | Low temperature deposition of iridium containing films | Feng Q. Liu, Hua Chung, Schubert S. Chu, Mei Chang, David Thompson | 2023-05-09 |
| 11552082 | Reducing gate induced drain leakage in DRAM wordline | Sung-Kwan Kang, Gill Yong Lee, Sang Ho Yu, Shih Chung Chen | 2023-01-10 |
| 11488830 | Oxygen free deposition of platinum group metal films | Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu +3 more | 2022-11-01 |
| 11396698 | ALD process for NiO film with tunable carbon content | Ghazal Saheli, Feng Q. Liu, David Thompson | 2022-07-26 |
| 11332488 | Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use | Atashi Basu, David Thompson, Nasrin Kazem | 2022-05-17 |
| 11293093 | Water assisted highly pure ruthenium thin film deposition | Feng Q. Liu, Feng Chen, David Thompson, Mei Chang | 2022-04-05 |
| 11094544 | Methods of forming self-aligned vias | David Thompson, Benjamin Schmiege, Abhijit Basu Mallick, Susmit Singha Roy, Ziqing Duan +3 more | 2021-08-17 |
| 11078224 | Precursors for the atomic layer deposition of transition metals and methods of use | Atashi Basu | 2021-08-03 |
| 10906925 | Ruthenium precursors for ALD and CVD thin film deposition and uses thereof | Benjamin Schmiege, David Thompson | 2021-02-02 |
| 10790287 | Reducing gate induced drain leakage in DRAM wordline | Sung-Kwan Kang, Gill Yong Lee, Sang Ho Yu, Shih Chung Chen | 2020-09-29 |
| 10790188 | Seamless ruthenium gap fill | Nasrin Kazem, David Thompson | 2020-09-29 |
| 10752649 | Metal precursors with modified diazabutadiene ligands for CVD and ALD and methods of use | Atashi Basu, David Thompson, Nasrin Kazem | 2020-08-25 |
| 10738008 | Nitrogen-containing ligands and their use in atomic layer deposition methods | David Thompson | 2020-08-11 |
| 10699897 | Acetylide-based silicon precursors and their use as ALD/CVD precursors | Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu, David Thompson | 2020-06-30 |
| 10643840 | Selective deposition defects removal by chemical etch | Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson +3 more | 2020-05-05 |
| 10643838 | In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD | Benjamin Schmiege, David Thompson | 2020-05-05 |
| 10633743 | System and method for controllable non-volatile metal removal | Tsung-Liang Chen, Benjamin Schmiege, Glen Gilchrist | 2020-04-28 |
| 10577386 | Ruthenium precursors for ALD and CVD thin film deposition and uses thereof | Benjamin Schmiege, David Thompson | 2020-03-03 |