Issued Patents All Time
Showing 1–25 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408370 | Structure and fabrication method of high voltage MOSFET with a vertical drift region | Changseok Kang, Tomohiko Kitajima | 2025-09-02 |
| 12148475 | Selection gate separation for 3D NAND | Chang-Seok Kang, Tomohiko Kitajima, Qian Fu, Sung-Kwan Kang, Takehito Koshizawa +1 more | 2024-11-19 |
| 11818877 | Three-dimensional dynamic random access memory (DRAM) and methods of forming the same | Chang-Seok Kang, Tomohiko Kitajima, Sung-Kwan Kang, Fredrick Fishburn, Nitin K. Ingle | 2023-11-14 |
| 11765889 | Method to scale dram with self aligned bit line process | Sung-Kwan Kang, Fredrick Fishburn, Abdul Wahab Mohammed | 2023-09-19 |
| 11763856 | 3-D DRAM structure with vertical bit-line | Sung-Kwan Kang, Chang-Seok Kang | 2023-09-19 |
| 11749315 | 3D DRAM structure with high mobility channel | Chang-Seok Kang, Tomohiko Kitajima, Sanjay Natarajan, Sung-Kwan Kang, Lequn Liu | 2023-09-05 |
| 11621266 | Method of testing a gap fill for DRAM | Priyadarshi Panda, Seshadri Ganguli, Sang Ho Yu, Sung-Kwan Kang, Sanjay Natarajan +2 more | 2023-04-04 |
| 11552082 | Reducing gate induced drain leakage in DRAM wordline | Sung-Kwan Kang, Sang Ho Yu, Shih Chung Chen, Jeffrey W. Anthis | 2023-01-10 |
| 11545504 | Methods and apparatus for three dimensional NAND structure fabrication | Takehito Koshizawa, Mukund Srinivasan, Tomohiko Kitajima, Chang-Seok Kang, Sung-Kwan Kang +1 more | 2023-01-03 |
| 11430801 | Methods and apparatus for three dimensional NAND structure fabrication | Takehito Koshizawa, Mukund Srinivasan, Tomohiko Kitajima, Chang-Seok Kang, Sung-Kwan Kang +1 more | 2022-08-30 |
| 11295786 | 3D dram structure with high mobility channel | Chang-Seok Kang, Tomohiko Kitajima, Sanjay Natarajan, Sung-Kwan Kang, Lequn Liu | 2022-04-05 |
| 11171141 | Gap fill methods of forming buried word lines in DRAM without forming bottom voids | Priyadarshi Panda, Seshadri Ganguli, Sang Ho Yu, Sung-Kwan Kang, Sanjay Natarajan +2 more | 2021-11-09 |
| 11049695 | Metal contact landing structure | Sung-Kwan Kang, Kyung Ha Kim | 2021-06-29 |
| 10998329 | Methods and apparatus for three dimensional NAND structure fabrication | Takehito Koshizawa, Mukund Srinivasan, Tomohiko Kitajima, Chang-Seok Kang, Sung-Kwan Kang +1 more | 2021-05-04 |
| 10964717 | Methods and apparatus for three-dimensional NAND structure fabrication | Sung-Kwan Kang, Chang-Seok Kang, Tomohiko Kitajima | 2021-03-30 |
| 10790287 | Reducing gate induced drain leakage in DRAM wordline | Sung-Kwan Kang, Sang Ho Yu, Shih Chung Chen, Jeffrey W. Anthis | 2020-09-29 |
| 10700072 | Cap layer for bit line resistance reduction | Priyadarshi Panda, Jianxin Lei, Wenting Hou, Mihaela Balseanu, Ning Li +4 more | 2020-06-30 |
| 10529602 | Method and apparatus for substrate fabrication | Priyadarshi Panda, Srinivas Gandikota, Sung-Kwan Kang, Sanjay Natarajan | 2020-01-07 |
| 9653311 | 3D NAND staircase CD fabrication utilizing ruthenium material | Seul Ki Ahn, Seung-Young Son | 2017-05-16 |
| 8178379 | Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit | Philippe Blanchard | 2012-05-15 |
| 7682841 | Method of forming integrated circuit having a magnetic tunnel junction device | Faiz Dahmani | 2010-03-23 |
| 7368299 | MTJ patterning using free layer wet etching and lift off techniques | Eugene J. O'Sullivan | 2008-05-06 |
| 7084079 | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications | Richard A. Conti, Daniel C. Edelstein | 2006-08-01 |
| 7075807 | Magnetic memory with static magnetic offset field | Rainer Leuschner, Daniel Braun, Ulrich Klostermann | 2006-07-11 |
| 7001783 | Mask schemes for patterning magnetic tunnel junctions | Gregory Costrini, Frank Findeis, Chanro Park | 2006-02-21 |