| 12482749 |
L-type wordline connection structure for three-dimensional memory |
Chang-Min Kang, Gill Yong Lee, Fred Fishburn, Sung-kee Kang, Sony Varghese |
2025-11-25 |
|
| 12477723 |
Three dimensional memory device and method of fabrication |
Chang-Min Kang, Fred Fishburn, Sung-kee Kang, Sony Varghese, Gill Yong Lee |
2025-11-18 |
|
| 12464716 |
NAND cell structure with charge trap cut |
Chang-Min Kang, Gill Yong Lee, Balasubramanian Pranatharthiharan, Mukund Srinivasan |
2025-11-04 |
|
| 12444615 |
Forming a doped hardmask |
Scott Falk, Rajesh Prasad, Sarah Michelle Bobek, Harry Whitesell, Kurt Decker-Lucke +2 more |
2025-10-14 |
|
| 12408370 |
Structure and fabrication method of high voltage MOSFET with a vertical drift region |
Changseok Kang, Gill Yong Lee |
2025-09-02 |
|
| 12310014 |
Selection gate separation for 3D NAND |
Chang-Seok Kang |
2025-05-20 |
|
| 12148475 |
Selection gate separation for 3D NAND |
Chang-Seok Kang, Gill Yong Lee, Qian Fu, Sung-Kwan Kang, Takehito Koshizawa +1 more |
2024-11-19 |
$80,955,000 |
| 12142475 |
Sequential plasma and thermal treatment |
Ning Li, Shuaidi Zhang, Mihaela Balseanu, Qi Gao, Rajesh Prasad +3 more |
2024-11-12 |
$39,712,000 |
| 11930637 |
Confined charge trap layer |
Chang-Seok Kang, Mihaela Balseanu |
2024-03-12 |
$97,620,000 |
| 11818877 |
Three-dimensional dynamic random access memory (DRAM) and methods of forming the same |
Chang-Seok Kang, Sung-Kwan Kang, Fredrick Fishburn, Gill Yong Lee, Nitin K. Ingle |
2023-11-14 |
$33,075,000 |
| 11749315 |
3D DRAM structure with high mobility channel |
Chang-Seok Kang, Gill Yong Lee, Sanjay Natarajan, Sung-Kwan Kang, Lequn Liu |
2023-09-05 |
$42,922,000 |
| 11594537 |
3-d dram cell with mechanical stability |
Chang-Seok Kang |
2023-02-28 |
$49,197,000 |
| 11587930 |
3-D DRAM structures and methods of manufacture |
Chang-Seok Kang, Nitin K. Ingle, Sung-Kwan Kang |
2023-02-21 |
$24,540,000 |
| 11587796 |
3D-NAND memory cell structure |
Chang-Seok Kang, Sung-Kwan Kang |
2023-02-21 |
$24,540,000 |
| 11574924 |
Memory cell fabrication for 3D NAND applications |
Changseok Kang |
2023-02-07 |
$44,390,000 |
| 11545504 |
Methods and apparatus for three dimensional NAND structure fabrication |
Takehito Koshizawa, Mukund Srinivasan, Chang-Seok Kang, Sung-Kwan Kang, Gill Yong Lee +1 more |
2023-01-03 |
$39,123,000 |
| 11515170 |
3D NAND etch |
Shishi Jiang, Pramit Manna, Bo Qi, Abhijit Basu Mallick, Rui Cheng +2 more |
2022-11-29 |
$23,914,000 |
| 11430801 |
Methods and apparatus for three dimensional NAND structure fabrication |
Takehito Koshizawa, Mukund Srinivasan, Chang-Seok Kang, Sung-Kwan Kang, Gill Yong Lee +1 more |
2022-08-30 |
$41,861,000 |
| 11295786 |
3D dram structure with high mobility channel |
Chang-Seok Kang, Gill Yong Lee, Sanjay Natarajan, Sung-Kwan Kang, Lequn Liu |
2022-04-05 |
$91,536,000 |
| 11189635 |
3D-NAND mold |
Chang-Seok Kang, Mukund Srinivasan, Sanjay Natarajan |
2021-11-30 |
$50,552,000 |
| 11158650 |
Memory cell fabrication for 3D nand applications |
Changseok Kang |
2021-10-26 |
$68,163,000 |
| 10998329 |
Methods and apparatus for three dimensional NAND structure fabrication |
Takehito Koshizawa, Mukund Srinivasan, Chang-Seok Kang, Sung-Kwan Kang, Gill Yong Lee +1 more |
2021-05-04 |
$101,757,000 |
| 10964717 |
Methods and apparatus for three-dimensional NAND structure fabrication |
Sung-Kwan Kang, Gill Yong Lee, Chang-Seok Kang |
2021-03-30 |
$120,425,000 |
| 10886140 |
3D NAND etch |
Shishi Jiang, Pramit Manna, Bo Qi, Abhijit Basu Mallick, Rui Cheng +2 more |
2021-01-05 |
$38,335,000 |
| 10651098 |
Polishing with measurement prior to deposition of outer layer |
Jeffrey Drue David, Jun Qian, Taketo Sekine, Garlen C. Leung, Sidney P. Huey |
2020-05-12 |
$50,210,000 |
