| 12482747 |
Local interconnects having different material compositions |
Cho-Chuan Yang, Theodorus E. Standaert, Jon Slaughter |
2025-11-25 |
|
| 12453297 |
Recessed local interconnect semiconductor memory device |
Cho-Chuan Yang, Theodorus E. Standaert |
2025-10-21 |
|
| RE50494 |
Self-forming embedded diffusion barriers |
Cyril Cabral, Jr., Juntao Li, Takeshi Nogami |
2025-07-15 |
|
| 12341099 |
Semiconductor backside transistor integration with backside power delivery network |
Ruilong Xie, Rajiv V. Joshi, Ravikumar Ramachandran, Eric R. Miller |
2025-06-24 |
|
| 12272545 |
Embedded metal contamination removal from BEOL wafers |
Devika Sil, Ashim Dutta, Yann Mignot, John C. Arnold, Kedari Matam +1 more |
2025-04-08 |
|
| 11955152 |
Dielectric fill for tight pitch MRAM pillar array |
Ashim Dutta, Chih-Chao Yang, Theodorus E. Standaert |
2024-04-09 |
$10,928,000 |
| 11937514 |
High-density memory devices using oxide gap fill |
Theodorus E. Standaert, Chih-Chao Yang |
2024-03-19 |
$12,891,000 |
| 11881433 |
Advanced copper interconnects with hybrid microstructure |
Chih-Chao Yang |
2024-01-23 |
$12,186,000 |
| 11804405 |
Method of forming copper interconnect structure with manganese barrier layer |
Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini, Hosadurga Shobha |
2023-10-31 |
$9,300,000 |
| 11557482 |
Electrode with alloy interface |
Chih-Chao Yang, Chao-Kun Hu, Oscar van der Straten |
2023-01-17 |
$4,393,000 |
| 11462583 |
Embedding magneto-resistive random-access memory devices between metal levels |
Ashim Dutta, Chih-Chao Yang, John C. Arnold, Theodorus E. Standaert |
2022-10-04 |
$9,590,000 |
| 11302630 |
Electrode-via structure |
Theodorus E. Standaert, Chih-Chao Yang |
2022-04-12 |
$4,292,000 |
| 11232983 |
Copper interconnect structure with manganese barrier layer |
Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini, Hosadurga Shobha |
2022-01-25 |
$10,845,000 |
| 11222817 |
Advanced copper interconnects with hybrid microstructure |
Chih-Chao Yang |
2022-01-11 |
$6,150,000 |
| 11217742 |
Bottom electrode for semiconductor memory device |
Chih-Chao Yang, Theodorus E. Standaert |
2022-01-04 |
$22,913,000 |
| 11177167 |
Ultrathin multilayer metal alloy liner for nano Cu interconnects |
Alfred Grill, Seth L. Knupp, Son V. Nguyen, Takeshi Nogami, Vamsi K. Paruchuri +2 more |
2021-11-16 |
$1,912,000 |
| 11145813 |
Bottom electrode for semiconductor memory device |
Chih-Chao Yang, Theodorus E. Standaert |
2021-10-12 |
$3,967,000 |
| 11081643 |
Bevel metal removal using ion beam etch |
Ashim Dutta, Saba Zare, Michael Rizzolo, Theodorus E. Standaert |
2021-08-03 |
$4,187,000 |
| 11056425 |
Structural enhancement of Cu nanowires |
Chih-Chao Yang |
2021-07-06 |
$5,313,000 |
| 11031542 |
Contact via with pillar of alternating layers |
Chih-Chao Yang, Michael Rizzolo, Theodorus E. Standaert |
2021-06-08 |
$4,452,000 |
| 10892404 |
Sacrificial buffer layer for metal removal at a bevel edge of a substrate |
Ashim Dutta, Saba Zare, Michael Rizzolo, Theodorus E. Standaert |
2021-01-12 |
$3,912,000 |
| 10833258 |
MRAM device formation with in-situ encapsulation |
Ashim Dutta, Chih-Chao Yang, Karthik Yogendra, John C. Arnold |
2020-11-10 |
$848,000 |
| 10777735 |
Contact via structures |
Chih-Chao Yang, Bruce B. Doris, Henry K. Utomo, Theodorus E. Standaert, Nathan P. Marchack |
2020-09-15 |
$3,481,000 |
| 10770347 |
Interconnect structure |
Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini, Hosadurga Shobha |
2020-09-08 |
$15,647,000 |
| 10714683 |
Multilayer hardmask for high performance MRAM devices |
Michael Rizzolo, Theodorus E. Standaert, Kisup Chung, Isabel Cristina Chu, John C. Arnold |
2020-07-14 |
$4,158,000 |
