Issued Patents All Time
Showing 25 most recent of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12062545 | Fluorine-free tungsten ALD for dielectric selectivity improvement | Ilanit Fisher, Chi-Chou Lin, Kedi Wu, Wen-Ting Chen, Shih Chung Chen +4 more | 2024-08-13 |
| 12046508 | Method of dielectric material fill and treatment | Shi YOU, He Ren, Nikolaos Bekiaris, Mehul Naik, Martin Jay Seamons +2 more | 2024-07-23 |
| 11894233 | Electronic device having an oxygen free platinum group metal film | Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu +3 more | 2024-02-06 |
| 11888045 | Integrated dipole flow for transistor | Yongjing Lin, Karla M Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench +4 more | 2024-01-30 |
| 11848369 | Horizontal gate-all-around device nanowire air gap spacer formation | Shiyu Sun, Nam Sung Kim, Bingxi Wood, Sheng-Chin Kung, Miao Jin | 2023-12-19 |
| 11830725 | Method of cleaning a structure and method of depositing a capping layer in a structure | He Ren, Hao Jiang, Chenfei Shen, Chi-Chou Lin, Hao Chen +2 more | 2023-11-28 |
| 11615984 | Method of dielectric material fill and treatment | Shi YOU, He Ren, Nikolaos Bekiaris, Mehul Naik, Martin Jay Seamons +2 more | 2023-03-28 |
| 11488830 | Oxygen free deposition of platinum group metal films | Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu +3 more | 2022-11-01 |
| 11282936 | Horizontal gate all around device nanowire air gap spacer formation | Shiyu Sun, Nam Sung Kim, Bingxi Wood, Sheng-Chin Kung, Miao Jin | 2022-03-22 |
| 11245022 | Integrated dipole flow for transistor | Yongjing Lin, Karla M Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench +4 more | 2022-02-08 |
| 11145761 | Horizontal gate all around and FinFET device isolation | Shiyu Sun, Theresa Kramer Guarini, Sung Won Jun, Vanessa Pena, Errol Antonio C. Sanchez +4 more | 2021-10-12 |
| 11075276 | Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors | Yongjing Lin, Shih Chung Chen, Lin Dong, Liqi Wu, Rongjun Wang +5 more | 2021-07-27 |
| 10777650 | Horizontal gate all around device nanowire air gap spacer formation | Shiyu Sun, Nam Sung Kim, Bingxi Wood, Sheng-Chin Kung, Miao Jin | 2020-09-15 |
| 10727080 | Tantalum-containing material removal | Xikun Wang, Soumendra N. Barman, Nitin K. Ingle | 2020-07-28 |
| 10665450 | Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films | Yixiong Yang, Paul F. Ma, Wei V. Tang, Wenyu Zhang, Shih Chung Chen +6 more | 2020-05-26 |
| 10608097 | Low thickness dependent work-function nMOS integration for metal gate | Paul F. Ma, Seshadri Ganguli, Shih Chung Chen, Rajesh Sathiyanarayanan, Atashi Basu +3 more | 2020-03-31 |
| 10573719 | Horizontal gate all around device isolation | Shiyu Sun, Theresa Kramer Guarini, Sung Won Jun, Benjamin Colombeau, Michael Chudzik | 2020-02-25 |
| 10553425 | Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD | Jessica S. Kachian, Mei Chang, Mary Edmonds, Andrew C. Kummel, Sang Wook Park +1 more | 2020-02-04 |
| 10490666 | Horizontal gate all around and FinFET device isolation | Shiyu Sun, Nam Sung Kim, Theresa Kramer Guarini, Sung Won Jun, Vanessa Pena +4 more | 2019-11-26 |
| 10381465 | Method for fabricating asymmetrical three dimensional device | Shiyu Sun, Benjamin Colombeau, Hans-Joachim L. Gossmann | 2019-08-13 |
| 10262858 | Surface functionalization and passivation with a control layer | Lin Dong, Andrew C. Kummel, Jessica S. Kachian, Mary Edmonds, Steve Wolf | 2019-04-16 |
| 10177227 | Method for fabricating junctions and spacers for horizontal gate all around devices | Lin Dong, Shiyu Sun, Myungsun Kim, Nam Sung Kim, Dimitri Kioussis +3 more | 2019-01-08 |
| 10170321 | Aluminum content control of TiAIN films | Wenyu Zhang, Wei V. Tang, Yixiong Yang, CHEN-HAN LIN, Yi Xu +8 more | 2019-01-01 |
| 10134585 | Low temperature atomic layer deposition of oxides on compound semiconductors | Kasra Sardashti, Tobin Kaufman-Osborn, Tyler Kent, Andrew C. Kummel, Shariq Siddiqui +2 more | 2018-11-20 |
| 10109534 | Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD) | Adam Brand, Seshadri Ganguli, David Thompson, Mei Chang | 2018-10-23 |