Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12381088 | Method for precision oxidation control by ion implantation | Supakit Charnvanichborikarn, Cao-Minh Vincent Lu, Ana Cristina Gomez Herrero, Wei Zou, Andrew Waite | 2025-08-05 |
| 12247283 | Method and apparatus for controlled ion implantation | Alexander Eidukonis, Dennis Rodier, Stanislav S. Todorov, Richard M. White, Wei Zhao +2 more | 2025-03-11 |
| 12002852 | System and technique for creating implanted regions using multiple tilt angles | Venkataramana R. Chavva | 2024-06-04 |
| 11830739 | Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions | Stanislav S. Todorov, Hiroyuki Ito | 2023-11-28 |
| 11804537 | Channeled implants for SiC MOSFET fabrication | Qintao Zhang, Samphy Hong, Wei Zou | 2023-10-31 |
| 11699570 | System and method for hi-precision ion implantation | Supakit Charnvanichborikarn, Wei Zou, Qintao Zhang, Aseem K. Srivastava, William R. Bogiages, Jr. +1 more | 2023-07-11 |
| 11551904 | System and technique for profile modulation using high tilt angles | Venkataramana R. Chavva, Kyuha Shim, Edwin Arevalo, Scott Falk, Rajesh Prasad | 2023-01-10 |
| 11495500 | Horizontal GAA nano-wire and nano-slab transistors | Benjamin Colombeau | 2022-11-08 |
| 11476330 | System and technique for creating implanted regions using multiple tilt angles | Venkataramana R. Chavva | 2022-10-18 |
| 11424125 | Angled ion implant to reduce MOSFET trench sidewall roughness | Qintao Zhang, Wei Zou | 2022-08-23 |
| 10483355 | Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth | Matthias Bauer, Benjamin Colombeau | 2019-11-19 |
| 10381465 | Method for fabricating asymmetrical three dimensional device | Shiyu Sun, Naomi Yoshida, Benjamin Colombeau | 2019-08-13 |
| 9853129 | Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth | Matthias Bauer, Benjamin Colombeau | 2017-12-26 |
| 9748364 | Method for fabricating three dimensional device | Shiyu Sun, Naomi Yoshida, Benjamin Colombeau | 2017-08-29 |
| 9455196 | Method for improving fin isolation | Nilay A. Pradhan, Benjamin Colombeau | 2016-09-27 |
| 9455335 | Techniques for ion implantation of non-planar field effect transistors | Anthony Renau | 2016-09-27 |
| 6632728 | Increasing the electrical activation of ion-implanted dopants | Conor S. Rafferty, Tony Haynes, Ramki Kalyanaraman, Vincent Venezia, Maria Lourdes Pelaz-Montes | 2003-10-14 |
| 6403454 | Silicon semiconductor devices with &dgr;-doped layers | Paul H. Citrin, David Müller | 2002-06-11 |
| 6358824 | Integrated circuits with tub-ties and shallow trench isolation | Thi-Hong-Ha Vuong | 2002-03-19 |
| 6153920 | Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby | Conor S. Rafferty | 2000-11-28 |
| 6054342 | Method of making integrated circuits with tub-ties | Thi-Hong-Ha Vuong | 2000-04-25 |
| 6043139 | Process for controlling dopant diffusion in a semiconductor layer | David Eaglesham, John M. Poate, Peter Stolk | 2000-03-28 |
| 5949112 | Integrated circuits with tub-ties | Thi-Hong-Ha Vuong | 1999-09-07 |
| 5731626 | Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby | David Eaglesham, John M. Poate, Peter Stolk | 1998-03-24 |
| 5500391 | Method for making a semiconductor device including diffusion control | Joze Bevk, Leonard C. Feldman, Henry S. Luftman, Ran-Hong Yan | 1996-03-19 |