Issued Patents All Time
Showing 1–25 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12424482 | Selective implantation into STI of ETSOI device | Wei Zou | 2025-09-23 |
| 12412789 | Endpoint optimization for semiconductor processes | Avishay Vaxman, Jeffrey P. Koch, David P. Surdock, Wayne R. Swart, David J. Lee +3 more | 2025-09-09 |
| 12369312 | Vertical FinFet formation using directional deposition | Sipeng Gu | 2025-07-22 |
| 12347687 | Etch rate modulation of FinFET through high-temperature ion implantation | Rajesh Prasad, Jun Lu | 2025-07-01 |
| 12308237 | Ion implantation to increase MOSFET threshold voltage | Samphy Hong, Wei Zou | 2025-05-20 |
| 12183794 | MOSFET gate shielding using an angled implant | Samphy Hong | 2024-12-31 |
| 12087585 | Low-temperature implant for buried layer formation | Samphy Hong, Wei Zou, Judy Campbell Soukup | 2024-09-10 |
| 12046473 | Backside wafer dopant activation | Samphy Hong, Vittoriano Ruscio, Wei Zou, David J. Lee | 2024-07-23 |
| 11955533 | Ion implantation to reduce nanosheet gate length variation | Sipeng Gu, Baonian Guo, Wei Zou, Kyuha Shim | 2024-04-09 |
| 11948799 | Minority carrier lifetime reduction for SiC IGBT devices | Wei Zou | 2024-04-02 |
| 11942324 | Method for BEOL metal to dielectric adhesion | Jun Lu, Ting Cai, Ma Ning, Weiye He, Jian Kang | 2024-03-26 |
| 11881405 | Methods for forming N-type buried layer in a substrate by performing non-doping implant through oxide layer formed over the substrate | Wei Zou | 2024-01-23 |
| 11882695 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Juntao Li, Geng Wang | 2024-01-23 |
| 11875995 | Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation | Scott Falk, Jun Lu | 2024-01-16 |
| 11804537 | Channeled implants for SiC MOSFET fabrication | Samphy Hong, Wei Zou, Hans-Joachim L. Gossmann | 2023-10-31 |
| 11798982 | Self-aligned trench MOSFET | Samphy Hong, Jason Appell, David J. Lee | 2023-10-24 |
| 11728383 | Localized stressor formation by ion implantation | Sipeng Gu, Wei Zou, Kyu-Ha Shim | 2023-08-15 |
| 11721743 | Implantation enabled precisely controlled source and drain etch depth | Wei Zou, Samphy Hong | 2023-08-08 |
| 11699570 | System and method for hi-precision ion implantation | Supakit Charnvanichborikarn, Wei Zou, Hans-Joachim L. Gossmann, Aseem K. Srivastava, William R. Bogiages, Jr. +1 more | 2023-07-11 |
| 11694897 | Backside wafer dopant activation | Wei Zou | 2023-07-04 |
| 11695060 | Ion implantation to form trench-bottom oxide of MOSFET | Samphy Hong, Wei Zou, Lei Zhong, David J. Lee, Felix Levitov | 2023-07-04 |
| 11610972 | Technique for reducing gate induced drain leakage in DRAM cells | Sipeng Gu | 2023-03-21 |
| 11538925 | Ion implantation to form step-oxide trench MOSFET | Sipeng Gu, Yi Zheng, John Hautala | 2022-12-27 |
| 11527412 | Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices | Samphy Hong, David J. Lee, Felix Levitov, Lei Zhong, Wei Zou | 2022-12-13 |
| 11527637 | Ion implantation to control formation of MOSFET trench-bottom oxide | Samphy Hong | 2022-12-13 |