| 12424482 |
Selective implantation into STI of ETSOI device |
Wei Zou |
2025-09-23 |
|
| 12412789 |
Endpoint optimization for semiconductor processes |
Avishay Vaxman, Jeffrey P. Koch, David P. Surdock, Wayne R. Swart, David J. Lee +3 more |
2025-09-09 |
|
| 12369312 |
Vertical FinFet formation using directional deposition |
Sipeng Gu |
2025-07-22 |
|
| 12347687 |
Etch rate modulation of FinFET through high-temperature ion implantation |
Rajesh Prasad, Jun Lu |
2025-07-01 |
|
| 12308237 |
Ion implantation to increase MOSFET threshold voltage |
Samphy Hong, Wei Zou |
2025-05-20 |
|
| 12183794 |
MOSFET gate shielding using an angled implant |
Samphy Hong |
2024-12-31 |
$49,330,000 |
| 12087585 |
Low-temperature implant for buried layer formation |
Samphy Hong, Wei Zou, Judy Campbell Soukup |
2024-09-10 |
$81,152,000 |
| 12046473 |
Backside wafer dopant activation |
Samphy Hong, Vittoriano Ruscio, Wei Zou, David J. Lee |
2024-07-23 |
$84,339,000 |
| 11955533 |
Ion implantation to reduce nanosheet gate length variation |
Sipeng Gu, Baonian Guo, Wei Zou, Kyuha Shim |
2024-04-09 |
$47,694,000 |
| 11948799 |
Minority carrier lifetime reduction for SiC IGBT devices |
Wei Zou |
2024-04-02 |
$42,223,000 |
| 11942324 |
Method for BEOL metal to dielectric adhesion |
Jun Lu, Ting Cai, Ma Ning, Weiye He, Jian Kang |
2024-03-26 |
$55,219,000 |
| 11881405 |
Methods for forming N-type buried layer in a substrate by performing non-doping implant through oxide layer formed over the substrate |
Wei Zou |
2024-01-23 |
$48,508,000 |
| 11882695 |
Vertical field effect transistor including integrated antifuse |
Kangguo Cheng, Juntao Li, Geng Wang |
2024-01-23 |
|
| 11875995 |
Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation |
Scott Falk, Jun Lu |
2024-01-16 |
$94,012,000 |
| 11804537 |
Channeled implants for SiC MOSFET fabrication |
Samphy Hong, Wei Zou, Hans-Joachim L. Gossmann |
2023-10-31 |
$79,893,000 |
| 11798982 |
Self-aligned trench MOSFET |
Samphy Hong, Jason Appell, David J. Lee |
2023-10-24 |
$34,065,000 |
| 11728383 |
Localized stressor formation by ion implantation |
Sipeng Gu, Wei Zou, Kyu-Ha Shim |
2023-08-15 |
$42,730,000 |
| 11721743 |
Implantation enabled precisely controlled source and drain etch depth |
Wei Zou, Samphy Hong |
2023-08-08 |
$46,911,000 |
| 11699570 |
System and method for hi-precision ion implantation |
Supakit Charnvanichborikarn, Wei Zou, Hans-Joachim L. Gossmann, Aseem K. Srivastava, William R. Bogiages, Jr. +1 more |
2023-07-11 |
$39,838,000 |
| 11694897 |
Backside wafer dopant activation |
Wei Zou |
2023-07-04 |
|
| 11695060 |
Ion implantation to form trench-bottom oxide of MOSFET |
Samphy Hong, Wei Zou, Lei Zhong, David J. Lee, Felix Levitov |
2023-07-04 |
|
| 11610972 |
Technique for reducing gate induced drain leakage in DRAM cells |
Sipeng Gu |
2023-03-21 |
$36,722,000 |
| 11538925 |
Ion implantation to form step-oxide trench MOSFET |
Sipeng Gu, Yi Zheng, John Hautala |
2022-12-27 |
$54,393,000 |
| 11527412 |
Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices |
Samphy Hong, David J. Lee, Felix Levitov, Lei Zhong, Wei Zou |
2022-12-13 |
$35,358,000 |
| 11527637 |
Ion implantation to control formation of MOSFET trench-bottom oxide |
Samphy Hong |
2022-12-13 |
$35,358,000 |
