Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for forming N-type buried layer in a substrate by performing non-doping implant through oxide layer formed over the substrate

Methods for forming N-type buried layer in a substrate by performing non-doping implant through oxide layer formed over the substrate

US Patent 11881405 · Granted Jan 23, 2024

Estimated economic value: $48,508,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Data forwarding in centralized unit and distributed unit split architectures2025
Selective implantation into STI of ETSOI device2025
Selective implantation into STI of ETSOI device2025
Endpoint optimization for semiconductor processes2025
Method for precision oxidation control by ion implantation2025
Vertical FinFet formation using directional deposition2025
Methods and devices for routing and bearer mapping configuration2025
Etch rate modulation of FinFET through high-temperature ion implantation2025
Ion implantation to increase MOSFET threshold voltage2025
Ion implantation to increase MOSFET threshold voltage2025
Method for beam switching and UCI transmission2025
Intelligent air-assisted spraying device for orchards and spraying method thereo2025