Issued Patents All Time
Showing 1–25 of 99 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12417923 | Techniques and apparatus for selective shaping of mask features using angled beams | — | 2025-09-16 |
| 12369299 | Devices and methods for DRAM leakage reduction | Armin Saeedi Vahdat, Yan Zhang, Johannes M. van Meer | 2025-07-22 |
| 12255067 | Method for depositing layers directly adjacent uncovered vias or contact holes | Charith Nanayakkara | 2025-03-18 |
| 12191156 | Ribbon beam plasma enhanced chemical vapor deposition system for anisotropic deposition of thin films | Tristan Y. Ma, Peter F. Kurunczi | 2025-01-07 |
| 12183627 | Multi process air gap formation | Charith Nanayakkara | 2024-12-31 |
| 12131948 | Techniques for void-free material depositions | M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese | 2024-10-29 |
| 12096622 | Directional etch for improved dual deck three-dimensional NAND architecture margin | Armin Saeedi Vahdat, Johannes M. van Meer | 2024-09-17 |
| 11987879 | High aspect ratio taper improvement using directional deposition | Armin Saeedi Vahdat, Yan Zhang | 2024-05-21 |
| 11942361 | Semiconductor device cavity formation using directional deposition | Armin Saeedi Vahdat, Tristan Y. Ma, Johannes M. van Meer, Naushad K. Variam | 2024-03-26 |
| 11908691 | Techniques to engineer nanoscale patterned features using ions | Simon Ruffell, Adam Brand, Huixiong Dai | 2024-02-20 |
| 11778832 | Wordline contact formation in NAND devices | Armin Saeedi Vahdat, Tristan Y. Ma, Johannes M. van Meer, Naushad K. Variam | 2023-10-03 |
| 11749564 | Techniques for void-free material depositions | M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese | 2023-09-05 |
| 11574800 | Extreme edge uniformity control | Alexandre Likhanskii, Maureen Petterson, Anthony Renau, Christopher A. Rowland, Costel Biloiu | 2023-02-07 |
| 11569095 | Techniques and apparatus for selective shaping of mask features using angled beams | — | 2023-01-31 |
| 11538925 | Ion implantation to form step-oxide trench MOSFET | Sipeng Gu, Yi Zheng, Qintao Zhang | 2022-12-27 |
| 11488823 | Techniques to engineer nanoscale patterned features using ions | Simon Ruffell, Adam Brand, Huixiong Dai | 2022-11-01 |
| 11404278 | Optical component having variable depth gratings and method of formation | Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph C. Olson | 2022-08-02 |
| 11043394 | Techniques and apparatus for selective shaping of mask features using angled beams | — | 2021-06-22 |
| 11043380 | Techniques to engineer nanoscale patterned features using ions | Simon Ruffell, Adam Brand, Huixiong Dai | 2021-06-22 |
| 10990014 | Performance improvement of EUV photoresist by ion implantation | Tristan Y. Ma, Huixiong Dai, Anthony Renau, Joseph C. Olson | 2021-04-27 |
| 10971368 | Techniques for processing substrates using directional reactive ion etching | Steven R. Sherman, Simon Ruffell, Adam Brand | 2021-04-06 |
| 10886279 | Device structure for forming semiconductor device having angled contacts | Sony Varghese, Anthony Renau, Morgan Evans, Joe Olson | 2021-01-05 |
| 10818499 | Optical component having variable depth gratings and method of formation | Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph C. Olson | 2020-10-27 |
| 10692872 | Device structure for forming semiconductor device having angled contacts | Sony Varghese, Anthony Renau, Morgan Evans, Joe Olson | 2020-06-23 |
| 10685865 | Method and device for power rail in a fin type field effect transistor | Min Gyu Sung, Sony Varghese, Johannes M. van Meer | 2020-06-16 |