Issued Patents All Time
Showing 1–25 of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12106943 | Substrate halo arrangement for improved process uniformity | Jay Wallace, Kevin Anglin, Tyler Rockwell, Christopher Campbell, Kevin M. Daniels +2 more | 2024-10-01 |
| 11908691 | Techniques to engineer nanoscale patterned features using ions | John Hautala, Adam Brand, Huixiong Dai | 2024-02-20 |
| 11664193 | Temperature controlled/electrically biased wafer surround | Kevin Anglin, Kevin Verrier | 2023-05-30 |
| 11646213 | Multi-zone platen temperature control | Kevin Anglin | 2023-05-09 |
| 11640909 | Techniques and apparatus for unidirectional hole elongation using angled ion beams | Kevin Anglin | 2023-05-02 |
| 11488823 | Techniques to engineer nanoscale patterned features using ions | John Hautala, Adam Brand, Huixiong Dai | 2022-11-01 |
| 11127593 | Techniques and apparatus for elongation patterning using angled ion beams | Kevin Anglin | 2021-09-21 |
| 11043380 | Techniques to engineer nanoscale patterned features using ions | John Hautala, Adam Brand, Huixiong Dai | 2021-06-22 |
| 10971368 | Techniques for processing substrates using directional reactive ion etching | Steven R. Sherman, John Hautala, Adam Brand | 2021-04-06 |
| 10665421 | In-situ beam profile metrology | Tsung-Liang Chen, Kevin Anglin | 2020-05-26 |
| 10546730 | Filling a cavity in a substrate using sputtering and deposition | John Hautala | 2020-01-28 |
| 10381232 | Techniques for manipulating patterned features using ions | Huixiong Dai, Jun Lang, John Hautala | 2019-08-13 |
| 10280512 | Apparatus and method for carbon film deposition profile control | Alex Tsung-Liang Chen | 2019-05-07 |
| 10229832 | Techniques for forming patterned features using directional ions | Steven R. Sherman, John Hautala | 2019-03-12 |
| 10222202 | Three dimensional structure fabrication control using novel processing system | Morgan Evans, Tristan Y. Ma, Kevin Anglin | 2019-03-05 |
| 10204909 | Non-uniform gate oxide thickness for DRAM device | Arvind Kumar, Tristan Y. Ma, Kyu-Ha Shim, John Hautala, Steven R. Sherman | 2019-02-12 |
| 10109494 | FinFet spacer etch with no fin recess and no gate-spacer pull-down | — | 2018-10-23 |
| 10008384 | Techniques to engineer nanoscale patterned features using ions | John Hautala, Adam Brand, Huixiong Dai | 2018-06-26 |
| 9984889 | Techniques for manipulating patterned features using ions | Huixiong Dai, Jun Lang, John Hautala | 2018-05-29 |
| 9934981 | Techniques for processing substrates using directional reactive ion etching | Steven R. Sherman, John Hautala, Adam Brand | 2018-04-03 |
| 9929015 | High efficiency apparatus and method for depositing a layer on a three dimensional structure | Thomas R. Omstead, Tristan Y. Ma, Ethan A. Wright, John Hautala | 2018-03-27 |
| 9847228 | Method for selectively depositing a layer on a three dimensional structure | Thomas R. Omstead, Anthony Renau | 2017-12-19 |
| 9589811 | FinFET spacer etch with no fin recess and no gate-spacer pull-down | — | 2017-03-07 |
| 9453279 | Method for selectively depositing a layer on a three dimensional structure | Thomas R. Omstead, Anthony Renau | 2016-09-27 |
| 9287123 | Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films | Swaminathan Srinivasan, Fareen Adeni Khaja, John Hautala | 2016-03-15 |