| 12482749 |
L-type wordline connection structure for three-dimensional memory |
Chang-Min Kang, Gill Yong Lee, Fred Fishburn, Tomohiko Kitajima, Sung-kee Kang |
2025-11-25 |
|
| 12477723 |
Three dimensional memory device and method of fabrication |
Chang-Min Kang, Fred Fishburn, Tomohiko Kitajima, Sung-kee Kang, Gill Yong Lee |
2025-11-18 |
|
| 12464702 |
Three-dimensional dynamic random-access memory (3D DRAM) gate all-around (GAA) design using stacked Si/SiGe |
Fredrick Fishburn |
2025-11-04 |
|
| 12354973 |
Stress and overlay management for semiconductor processing |
Pradeep Subrahmanyan, Sean S. Kang |
2025-07-08 |
|
| 12217974 |
Localized stress modulation by implant to back of wafer |
Pradeep Subrahmanyan, Dennis Rodier, Kyuha Shim |
2025-02-04 |
|
| 12131948 |
Techniques for void-free material depositions |
M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, John Hautala |
2024-10-29 |
$69,228,000 |
| 12020979 |
Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material |
Gurtej S. Sandhu, John Smythe, Hyun Sik Kim |
2024-06-25 |
$27,776,000 |
| 11980021 |
CMOS over array of 3-D DRAM device |
Fred Fishburn |
2024-05-07 |
$105,661,000 |
| 11974423 |
Replacement channel process for three-dimensional dynamic random access memory |
Fredrick Fishburn, Arvind Kumar |
2024-04-30 |
$79,776,000 |
| 11956978 |
Techniques and device structure based upon directional seeding and selective deposition |
M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri |
2024-04-09 |
$47,694,000 |
| 11749564 |
Techniques for void-free material depositions |
M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, John Hautala |
2023-09-05 |
$42,922,000 |
| 11700721 |
Structures and methods for forming dynamic random-access devices |
— |
2023-07-11 |
$39,838,000 |
| 11569242 |
DRAM memory device having angled structures with sidewalls extending over bitlines |
Min Gyu Sung |
2023-01-31 |
$29,381,000 |
| 11557515 |
Methods for sub-lithography resolution patterning |
— |
2023-01-17 |
$39,427,000 |
| 11532483 |
Spacer sculpting for forming semiconductor devices |
— |
2022-12-20 |
|
| 11515198 |
Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions |
Gurtej S. Sandhu, Scott L. Light, John Smythe |
2022-11-29 |
$10,551,000 |
| 11462546 |
Dynamic random access device including two-dimensional array of fin structures |
Naushad K. Variam |
2022-10-04 |
|
| 11404314 |
Metal line patterning |
M. Arif Zeeshan, Shantanu Kallakuri, Kelvin Chan |
2022-08-02 |
$46,822,000 |
| 11380691 |
CMOS over array of 3-D DRAM device |
Fred Fishburn |
2022-07-05 |
$35,888,000 |
| 11217491 |
Replacement gate formation with angled etch and deposition |
Min Gyu Sung, Naushad K. Variam, Johannes M. van Meer, Jae-Young Lee |
2022-01-04 |
|
| 11152373 |
Structures and methods for forming dynamic random-access devices |
— |
2021-10-19 |
$109,516,000 |
| 11101183 |
Gate spacer formation for scaled CMOS devices |
Min Gyu Sung |
2021-08-24 |
|
| 11037788 |
Integration of device regions |
Min Gyu Sung |
2021-06-15 |
$88,912,000 |
| 11018138 |
Methods for forming dynamic random-access devices by implanting a drain through a spacer opening at the bottom of angled structures |
Min Gyu Sung |
2021-05-25 |
$67,143,000 |
| 10998221 |
Semiconductor constructions having fluorocarbon material |
Gurtej S. Sandhu, John Smythe, Hyun Sik Kim |
2021-05-04 |
$18,454,000 |
