Issued Patents All Time
Showing 25 most recent of 139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12324244 | Epitaxial single crystalline silicon growth for memory arrays | Glen H. Walters, Scott E. Sills, John F. Kaeding | 2025-06-03 |
| 12279410 | Epitaxial single crystalline silicon growth for a horizontal access device | Armin Saeedi Vahdat, Gurtej S. Sandhu, Scott E. Sills, Si-Woo Lee | 2025-04-15 |
| 12166072 | Channel conduction in semiconductor devices | Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more | 2024-12-10 |
| 12020979 | Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material | Gurtej S. Sandhu, Sony Varghese, Hyun Sik Kim | 2024-06-25 |
| 12015089 | Transistors comprising two-dimensional materials and related memory cells and electronic devices | Witold Kula, Gurtej S. Sandhu | 2024-06-18 |
| 11935782 | Methods for inhibiting line bending during conductive material deposition, and related apparatus | Gurtej S. Sandhu, Marko Milojevic, Timothy A. Quick, Sumeet C. Pandey | 2024-03-19 |
| 11854869 | Methods of forming high aspect ratio features | Ken Tokashiki, Gurtej S. Sandhu | 2023-12-26 |
| 11769795 | Channel conduction in semiconductor devices | Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more | 2023-09-26 |
| 11715692 | Microelectronic devices including conductive rails, and related methods | John D. Hopkins, Jordan D. Greenlee, Francois H. Fabreguette | 2023-08-01 |
| 11651955 | Methods of forming silicon nitride including plasma exposure | Sumeet C. Pandey, Brenda D. Kraus, Stefan Uhlenbrock, Timothy A. Quick | 2023-05-16 |
| 11515198 | Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions | Gurtej S. Sandhu, Scott L. Light, Sony Varghese | 2022-11-29 |
| 11476251 | Channel integration in a three-node access device for vertical three dimensional (3D) memory | Scott E. Sills, Si-Woo Lee, Gurtej S. Sandhu, Armin Saeedi Vahdat | 2022-10-18 |
| 11417565 | Methods of forming high aspect ratio openings and methods of forming high aspect ratio features | Ken Tokashiki, Gurtej S. Sandhu | 2022-08-16 |
| 11411008 | Integrated circuity, dram circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry | Gurtej S. Sandhu | 2022-08-09 |
| 11329051 | Gate dielectric repair on three-node access device formation for vertical three-dimensional (3D) memory | Gurtej S. Sandhu, Armin Saeedi Vahdat, Si-Woo Lee, Scott E. Sills | 2022-05-10 |
| 11289491 | Epitaxtal single crystalline silicon growth for a horizontal access device | Armin Saeedi Vahdat, Gurtej S. Sandhu, Scott E. Sills, Si-Woo Lee | 2022-03-29 |
| 11270909 | Apparatus with species on or in conductive material on elongate lines | Gurtej S. Sandhu, Marko Milojevic, Timothy A. Quick, Sumeet C. Pandey | 2022-03-08 |
| 11239117 | Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory | Armin Saeedi Vahdat, Si-Woo Lee, Gurtej S. Sandhu, Scott E. Sills | 2022-02-01 |
| 11227864 | Storage node after three-node access device formation for vertical three dimensional (3D) memory | Armin Saeedi Vahdat, Si-Woo Lee, Gurtej S. Sandhu, Scott E. Sills | 2022-01-18 |
| 11171206 | Channel conduction in semiconductor devices | Kamal M. Karda, Haitao Liu, Si-Woo Lee, Fatma Arzum Simsek-Ege, Deepak Chandra Pandey +1 more | 2021-11-09 |
| 11127830 | Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods | Silvia Borsari, Francois H. Fabreguette, Sutharsan Ketharanathan | 2021-09-21 |
| 11121258 | Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods | Witold Kula, Gurtej S. Sandhu | 2021-09-14 |
| 11081364 | Reduction of crystal growth resulting from annealing a conductive material | Marko Milojevic | 2021-08-03 |
| 10998221 | Semiconductor constructions having fluorocarbon material | Gurtej S. Sandhu, Sony Varghese, Hyun Sik Kim | 2021-05-04 |
| 10964536 | Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio | Francois H. Fabreguette, Paul A. Paduano, Gurtej S. Sandhu, Matthew N. Rocklein | 2021-03-30 |