Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12150303 | Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies | Byeung Chul Kim, Richard J. Hill, Purnima Narayanan, Shyam Surthi | 2024-11-19 |
| 11715692 | Microelectronic devices including conductive rails, and related methods | John D. Hopkins, Jordan D. Greenlee, John Smythe | 2023-08-01 |
| 11672118 | Electronic devices comprising adjoining oxide materials and related systems | Shyam Surthi, Richard J. Hill, Gurtej S. Sandhu, Byeung Chul Kim, Chris M. Carlson +2 more | 2023-06-06 |
| 11672120 | Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies | Byeung Chui Kim, Richard J. Hill, Purnima Narayanan, Shyam Surthi | 2023-06-06 |
| 11631697 | Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies | Shyam Surthi, Byeung Chul Kim, Richard J. Hill, Gurtej S. Sandhu | 2023-04-18 |
| 11557608 | Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies | Byeung Chul Kim, Richard J. Hill, Shyam Surthi | 2023-01-17 |
| 11289501 | Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies | Shyam Surthi, Byeung Chul Kim, Richard J. Hill, Gurtej S. Sandhu | 2022-03-29 |
| 11127830 | Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods | John Smythe, Silvia Borsari, Sutharsan Ketharanathan | 2021-09-21 |
| 11107830 | Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies | Byeung Chul Kim, Richard J. Hill, Shyam Surthi | 2021-08-31 |
| 11037956 | Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies | Byeung Chul Kim, Richard J. Hill, Purnima Narayanan, Shyam Surthi | 2021-06-15 |
| 10964536 | Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio | Paul A. Paduano, Gurtej S. Sandhu, John Smythe, Matthew N. Rocklein | 2021-03-30 |
| 10937654 | Methods of doping a silicon-containing material and methods of forming a semiconductor device | John Smythe, Witold Kula | 2021-03-02 |
| 10777576 | Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies | Byeung Chul Kim, Richard J. Hill, Purnima Narayanan, Shyam Surthi | 2020-09-15 |
| 7426067 | Atomic layer deposition on micro-mechanical devices | Victor M. Bright, Jeffrey W. Elam, Steven M. George, Nils D. Hoivik, Yung-Cheng Lee +2 more | 2008-09-16 |