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Integrated circuitry, a method used in forming integrated circuitry, and a method used in forming a memory array comprising strings of memory cells |
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2023-12-12 |
| 11744072 |
Integrated assemblies which include stacked memory decks |
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| 11672120 |
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies |
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2023-06-06 |
| 11538819 |
Integrated circuitry, a method used in forming integrated circuitry, and a method used in forming a memory array comprising strings of memory cells |
— |
2022-12-27 |
| 11107831 |
Methods of forming integrated assemblies include stacked memory decks |
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2021-08-31 |
| 11056505 |
Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies |
John D. Hopkins, Jordan D. Greenlee |
2021-07-06 |
| 11037956 |
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies |
Byeung Chul Kim, Francois H. Fabreguette, Richard J. Hill, Shyam Surthi |
2021-06-15 |
| 10879259 |
Methods and apparatuses having memory cells including a monolithic semiconductor channel |
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2020-12-29 |
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3D NAND with integral drain-end select gate (SGD) |
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| 10777576 |
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies |
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2020-09-15 |
| 10134758 |
Memory devices and systems having reduced bit line to drain select gate shorting and associated methods |
Hongbin Zhu, Jun Zhao, Gordon A. Haller, Damir Fazil |
2018-11-20 |
| 10090317 |
Methods and apparatuses having memory cells including a monolithic semiconductor channel |
Jie Sun, Zhenyu Lu, Roger W. Lindsay, Brian Cleereman, John D. Hopkins +3 more |
2018-10-02 |
| 9741734 |
Memory devices and systems having reduced bit line to drain select gate shorting and associated methods |
Hongbin Zhu, Jun Zhao, Gordon A. Haller, Damir Fazil |
2017-08-22 |
| 9431410 |
Methods and apparatuses having memory cells including a monolithic semiconductor channel |
Jie Sun, Zhenyu Lu, Roger W. Lindsay, Brian Cleereman, John D. Hopkins +3 more |
2016-08-30 |
