Issued Patents All Time
Showing 51–75 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10236381 | IFinFET | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-19 |
| 10229919 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-12 |
| 10229920 | One-time programmable vertical field-effect transistor | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-12 |
| 10224329 | Forming gates with varying length using sidewall image transfer | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-05 |
| 10170368 | Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning | Dechao Guo, Liyang Song, Xinhui Wang | 2019-01-01 |
| 10157935 | Nanosheet capacitor | Kangguo Cheng, Juntao Li, Geng Wang | 2018-12-18 |
| 10141403 | Integrating thin and thick gate dielectric nanosheet transistors on same chip | Kangguo Cheng, Juntao Li, Geng Wang | 2018-11-27 |
| 10090293 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Juntao Li, Geng Wang | 2018-10-02 |
| 10032909 | Vertical transistor having uniform bottom spacers | Kangguo Cheng, Juntao Li, Geng Wang | 2018-07-24 |
| 9991254 | Forming horizontal bipolar junction transistor compatible with nanosheets | Kangguo Cheng, Juntao Li, Geng Wang | 2018-06-05 |
| 9935014 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Kangguo Cheng, Juntao Li, Geng Wang | 2018-04-03 |
| 9917090 | Vertical antifuse structures | Kangguo Cheng, Juntao Li, Geng Wang | 2018-03-13 |
| 9899383 | Forming gates with varying length using sidewall image transfer | Kangguo Cheng, Juntao Li, Geng Wang | 2018-02-20 |
| 9881998 | Stacked nanosheet field effect transistor device with substrate isolation | Kangguo Cheng, Juntao Li, Geng Wang | 2018-01-30 |
| 9847246 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Juntao Li, Geng Wang | 2017-12-19 |
| 9842835 | High density nanosheet diodes | Kangguo Cheng, Juntao Li, Geng Wang | 2017-12-12 |
| 9799647 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Juntao Li, Geng Wang | 2017-10-24 |
| 9793270 | Forming gates with varying length using sidewall image transfer | Kangguo Cheng, Juntao Li, Geng Wang | 2017-10-17 |
| 9768166 | Integrated LDMOS and VFET transistors | Kangguo Cheng, Juntao Li, Geng Wang | 2017-09-19 |
| 9728621 | iFinFET | Kangguo Cheng, Juntao Li, Geng Wang | 2017-08-08 |
| 9659944 | One time programmable memory with a twin gate structure | Mei XUE, Wenwei Yang, Akira Ito | 2017-05-23 |
| 9653480 | Nanosheet capacitor | Kangguo Cheng, Juntao Li, Geng Wang | 2017-05-16 |
| 9634014 | Method of making a programmable cell and structure thereof | Akira Ito | 2017-04-25 |
| 9627511 | Vertical transistor having uniform bottom spacers | Kangguo Cheng, Juntao Li, Geng Wang | 2017-04-18 |
| 9536880 | Devices having multiple threshold voltages and method of fabricating such devices | Aimin Xing | 2017-01-03 |