Issued Patents All Time
Showing 26–50 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11444153 | Method of forming stress memorization layer on backside of semiconductor substrate and semiconductor device thereof | Wei Zou | 2022-09-13 |
| 11437488 | Split-gate MOSFET with gate shield | Samphy Hong, David J. Lee, Jason Appell | 2022-09-06 |
| 11430877 | Ion implantation to reduce nanosheet gate length variation | Sipeng Gu, Baonian Guo, Wei Zou, Kyuha Shim | 2022-08-30 |
| 11424125 | Angled ion implant to reduce MOSFET trench sidewall roughness | Wei Zou, Hans-Joachim L. Gossmann | 2022-08-23 |
| 11398347 | Inductor with ferromagnetic cores | Kangguo Cheng, Juntao Li, Geng Wang | 2022-07-26 |
| 11387338 | Methods for forming planar metal-oxide-semiconductor field-effect transistors | Samphy Hong, Lei Zhong, David J. Lee, Felix Levitov, Carlos Caballero +1 more | 2022-07-12 |
| 11201057 | Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation | Scott Falk, Jun Lu | 2021-12-14 |
| 11139307 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Juntao Li, Geng Wang | 2021-10-05 |
| 11114299 | Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterning | Kyu-Ha Shim, Rajesh Prasad | 2021-09-07 |
| 11037725 | Manufacturing method for inductor with ferromagnetic cores | Kangguo Cheng, Juntao Li, Geng Wang | 2021-06-15 |
| 10930508 | Replacement metal gate formation of PMOS ultra-low voltage devices using a thermal implant | Kyu-Ha Shim | 2021-02-23 |
| 10679998 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Juntao Li, Geng Wang | 2020-06-09 |
| 10680000 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Juntao Li, Geng Wang | 2020-06-09 |
| 10615166 | Programmable device compatible with vertical transistor flow | Kangguo Cheng, Juntao Li, Geng Wang | 2020-04-07 |
| 10615159 | Integrated LDMOS and VFET transistors | Kangguo Cheng, Juntao Li, Geng Wang | 2020-04-07 |
| 10553354 | Method of manufacturing inductor with ferromagnetic cores | Kangguo Cheng, Juntao Li, Geng Wang | 2020-02-04 |
| 10522549 | Uniform gate dielectric for DRAM device | Baonian Guo | 2019-12-31 |
| 10504890 | High density nanosheet diodes | Kangguo Cheng, Juntao Li, Geng Wang | 2019-12-10 |
| 10396169 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Kangguo Cheng, Juntao Li, Geng Wang | 2019-08-27 |
| 10269790 | Forming horizontal bipolar junction transistor compatible with nanosheets | Kangguo Cheng, Juntao Li, Geng Wang | 2019-04-23 |
| 10256150 | Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning | Dechao Guo, Liyang Song, Xinhui Wang | 2019-04-09 |
| 10249539 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Kangguo Cheng, Juntao Li, Geng Wang | 2019-04-02 |
| 10249709 | Stacked nanosheet field effect transistor device with substrate isolation | Kangguo Cheng, Juntao Li, Geng Wang | 2019-04-02 |
| 10243054 | Integrating standard-gate and extended-gate nanosheet transistors on the same substrate | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-26 |
| 10236382 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Juntao Li, Geng Wang | 2019-03-19 |