Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848369 | Horizontal gate-all-around device nanowire air gap spacer formation | Shiyu Sun, Nam Sung Kim, Bingxi Wood, Naomi Yoshida, Miao Jin | 2023-12-19 |
| 11456178 | Gate interface engineering with doped layer | Steven C. H. Hung, Benjamin Colombeau, Abhishek Dube, Patricia M. Liu, Malcolm J. Bevan +1 more | 2022-09-27 |
| 11282936 | Horizontal gate all around device nanowire air gap spacer formation | Shiyu Sun, Nam Sung Kim, Bingxi Wood, Naomi Yoshida, Miao Jin | 2022-03-22 |
| 11271097 | Cap oxidation for FinFET formation | Steven C. H. Hung, Benjamin Colombeau, Abhishek Dube, Patricia M. Liu, Malcolm J. Bevan +1 more | 2022-03-08 |
| 11011635 | Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) device | Hua Chung | 2021-05-18 |
| 10861722 | Integrated semiconductor processing | Benjamin Colombeau, Patricia M. Liu | 2020-12-08 |
| 10777650 | Horizontal gate all around device nanowire air gap spacer formation | Shiyu Sun, Nam Sung Kim, Bingxi Wood, Naomi Yoshida, Miao Jin | 2020-09-15 |
| 10249479 | Magnet configurations for radial uniformity tuning of ICP plasmas | Joseph AuBuchon, Tza-Jing Gung, Travis Koh, Nattaworn Boss Nunta, Steven Lane +2 more | 2019-04-02 |
| 9966438 | Method of doped germanium formation | Yi-Chiau Huang, Hua Chung, Xuebin Li | 2018-05-08 |