| 12500162 |
Staggered vertically spaced integrated circuit line metallization with differential vias and metal-selective deposition |
Elijah V. Karpov, Miriam Reshotko, Jianxin Chen, Matthew V. Metz |
2025-12-16 |
|
| 12394716 |
Integrated circuit interconnect structures with graphene cap |
Carl Naylor, Jasmeet S. Chawla, Matthew V. Metz, Sean King, Ramanan V. Chebiam +5 more |
2025-08-19 |
|
| 12396254 |
Stacked 2D CMOS with inter metal layers |
Kevin P. O'Brien, Uygar E. Avci, Chelsey Dorow, Sudarat Lee, Kirby Maxey +4 more |
2025-08-19 |
|
| 12369382 |
Integrated circuit structures with graphene contacts |
Carl Naylor, Kirby Maxey, Kevin P. O'Brien, Chelsey Dorow, Sudarat Lee +3 more |
2025-07-22 |
|
| 12342551 |
Capacitor architectures in semiconductor devices |
Sudipto Naskar, Manish Chandhok, Abhishek A. Sharma, Roman Caudillo, Cheyun Lin |
2025-06-24 |
|
| 12183739 |
Ribbon or wire transistor stack with selective dipole threshold voltage shifter |
Nicole K. Thomas, Eric Mattson, Sudarat Lee, Tobias Brown-Heft, I-Cheng Tung +6 more |
2024-12-31 |
$16,542,000 |
| 11923290 |
Halogen treatment for NMOS contact resistance improvement |
Siddharth Chouksey, Gilbert Dewey, Nazila Haratipour, Mengcheng Lu, Jitendra Kumar Jha +3 more |
2024-03-05 |
$29,696,000 |
| 11901404 |
Capacitor architectures in semiconductor devices |
Sudipto Naskar, Manish Chandhok, Abhishek A. Sharma, Roman Caudillo, Cheyun Lin |
2024-02-13 |
$18,546,000 |
| 11869889 |
Self-aligned gate endcap (SAGE) architectures without fin end gap |
Szuya S. Liao, Jessica M. Torres, Lukas Baumgartel, Kiran CHIKKADI, Diane LANCASTER +4 more |
2024-01-09 |
$30,329,000 |
| 11791375 |
Capacitor architectures in semiconductor devices |
Sudipto Naskar, Manish Chandhok, Abhishek A. Sharma, Roman Caudillo, Cheyun Lin |
2023-10-17 |
$15,641,000 |
| 11695051 |
Gate stacks for FinFET transistors |
Ashish Verma Penumatcha, Seung Hoon Sung, Uygar E. Avci, Ian A. Young, Jack T. Kavalieros |
2023-07-04 |
|
| 11672133 |
Vertically stacked memory elements with air gap |
Aaron D. Lilak, Patrick Morrow, Hui Jae Yoo, Sean T. Ma, Abhishek A. Sharma +2 more |
2023-06-06 |
$21,341,000 |
| 11594485 |
Local interconnect with air gap |
Kevin Lin, Tristan A. Tronic, Urusa Alaan, Ehren Mannebach |
2023-02-28 |
$10,430,000 |
| 11532724 |
Selective gate spacers for semiconductor devices |
Szuya S. Liao, Florian Gstrein, Rami Hourani, Patricio E. Romero, Grant Kloster +1 more |
2022-12-20 |
$12,719,000 |
| 11270887 |
Passivation layer for germanium substrate |
Patricio E. Romero, Florian Gstrein, Cen Tan |
2022-03-08 |
$16,017,000 |
| 11264449 |
Capacitor architectures in semiconductor devices |
Sudipto Naskar, Manish Chandhok, Abhishek A. Sharma, Roman Caudillo, Cheyun Lin |
2022-03-01 |
$16,941,000 |
| 11227798 |
Metal aluminum gallium indium carbide thin films as liners and barriers for interconnects |
Florian Gstrein |
2022-01-18 |
$31,898,000 |
| 11217456 |
Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication |
James M. Blackwell, Cen Tan, Marie Krysak |
2022-01-04 |
$22,100,000 |
| 10998423 |
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping |
Van H. Le, Martin M. Mitan, Szuya S. Liao |
2021-05-04 |
$37,420,000 |
| 10971600 |
Selective gate spacers for semiconductor devices |
Szuya S. Liao, Florian Gstrein, Rami Hourani, Patricio E. Romero, Grant Kloster +1 more |
2021-04-06 |
$36,336,000 |
| 10896852 |
Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same |
Martin M. Mitan, Aaron A. Budrevich |
2021-01-19 |
$115,732,000 |
| 10886175 |
Differentiated molecular domains for selective hardmask fabrication and structures resulting therefrom |
Eungnak Han, Rami Hourani, Florian Gstrein, Gurpreet Singh, Kevin Lin +1 more |
2021-01-05 |
$27,050,000 |
| 10777366 |
Method of increasing an energy density and an achievable power output of an energy storage device |
Donald S. Gardner, Zhaohui Chen, Wei Jin, Eric C. Hannah, Tomm Aldridge +1 more |
2020-09-15 |
$34,212,000 |
| 10756215 |
Selective deposition utilizing sacrificial blocking layers for semiconductor devices |
Grant Kloster, Rami Hourani, Szuya S. Liao, Patricio E. Romero, Florian Gstrein |
2020-08-25 |
$27,661,000 |
| 10720508 |
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping |
Van H. Le, Martin M. Mitan, Szuya S. Liao |
2020-07-21 |
$33,796,000 |
