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Thin film transistors having strain-inducing structures integrated with 2D channel materials |
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Integrated circuit interconnect structures with graphene cap |
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Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication |
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| 12396254 |
Stacked 2D CMOS with inter metal layers |
Kevin P. O'Brien, Uygar E. Avci, Scott B. Clendenning, Chelsey Dorow, Kirby Maxey +4 more |
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| 12369382 |
Integrated circuit structures with graphene contacts |
Carl Naylor, Kirby Maxey, Kevin P. O'Brien, Chelsey Dorow, Ashish Verma Penumatcha +3 more |
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| 12278289 |
TMD inverted nanowire integration |
Kevin P. O'Brien, Carl Naylor, Chelsey Dorow, Kirby Maxey, Tanay Gosavi +4 more |
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| 12266712 |
Transition metal dichalcogenide nanosheet transistors and methods of fabrication |
Ashish Verma Penumatcha, Kevin P. O'Brien, Chelsey Dorow, Kirby Maxey, Carl Naylor +4 more |
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| 12266720 |
Transistors with monocrystalline metal chalcogenide channel materials |
Carl Naylor, Chelsey Dorow, Kevin P. O'Brien, Kirby Maxey, Ashish Verma Penumatcha +6 more |
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Ribbon or wire transistor stack with selective dipole threshold voltage shifter |
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Transition metal dichalcogenide nanowires and methods of fabrication |
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| 12125895 |
Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication |
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| 11935956 |
TMD inverted nanowire integration |
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2024-03-19 |