| 12365984 |
Transition metal deposition processes and deposition assembly |
Janne-Petteri Niemelä, Elina Färm, Charles Dezelah, Jan Willem Maes |
2025-07-22 |
| 12344627 |
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition |
— |
2025-07-01 |
| 11866453 |
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition |
— |
2024-01-09 |
| 11532724 |
Selective gate spacers for semiconductor devices |
Scott B. Clendenning, Szuya S. Liao, Florian Gstrein, Rami Hourani, Grant Kloster +1 more |
2022-12-20 |
| 11512098 |
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition |
— |
2022-11-29 |
| 11270887 |
Passivation layer for germanium substrate |
Scott B. Clendenning, Florian Gstrein, Cen Tan |
2022-03-08 |
| 10971600 |
Selective gate spacers for semiconductor devices |
Scott B. Clendenning, Szuya S. Liao, Florian Gstrein, Rami Hourani, Grant Kloster +1 more |
2021-04-06 |
| 10756215 |
Selective deposition utilizing sacrificial blocking layers for semiconductor devices |
Grant Kloster, Scott B. Clendenning, Rami Hourani, Szuya S. Liao, Florian Gstrein |
2020-08-25 |
| 10464959 |
Inherently selective precursors for deposition of second or third row transition metal thin films |
— |
2019-11-05 |
| 10396176 |
Selective gate spacers for semiconductor devices |
Scott B. Clendenning, Szuya S. Liao, Florian Gstrein, Rami Hourani, Grant Kloster +1 more |
2019-08-27 |
| 10243080 |
Selective deposition utilizing sacrificial blocking layers for semiconductor devices |
Grant Kloster, Scott B. Clendenning, Rami Hourani, Szuya S. Liao, Florian Gstrein |
2019-03-26 |
| 10217646 |
Transition metal dry etch by atomic layer removal of oxide layers for device fabrication |
John J. Plombon |
2019-02-26 |
| 9932671 |
Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) |
James M. Blackwell, Scott B. Clendenning, Grant Kloster, Florian Gstrein, Harsono S. Simka +2 more |
2018-04-03 |
| 9786559 |
Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs) |
Paul A. Zimmerman, Scott B. Clendenning, Paul B. Fischer, Robert Edgeworth |
2017-10-10 |
| 9583389 |
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) |
Scott B. Clendenning, Jeanette M. Roberts, Florian Gstrein |
2017-02-28 |
| 9530733 |
Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions |
Robert L. Bristol, James M. Blackwell, Scott B. Clendenning, Florian Gstrein, Eungnak Han +3 more |
2016-12-27 |
| 9455150 |
Conformal thin film deposition of electropositive metal alloy films |
Scott B. Clendenning, Gilbert Dewey |
2016-09-27 |
| 9390932 |
Electropositive metal containing layers for semiconductor applications |
Scott B. Clendenning |
2016-07-12 |
| 9385033 |
Method of forming a metal from a cobalt metal precursor |
James M. Blackwell, Scott B. Clendenning, John J. Plombon |
2016-07-05 |
| 9236292 |
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) |
Scott B. Clendenning, Jeanette M. Roberts, Florian Gstrein |
2016-01-12 |
| 9090964 |
Additives to improve the performance of a precursor source for cobalt deposition |
James M. Blackwell, Daniel Bergstrom, Scott B. Clendenning |
2015-07-28 |
| 9067958 |
Scalable and high yield synthesis of transition metal bis-diazabutadienes |
— |
2015-06-30 |
| 8952355 |
Electropositive metal containing layers for semiconductor applications |
Scott B. Clendenning |
2015-02-10 |