| 12433007 |
Transistor gate trench engineering to decrease capacitance and resistance |
Seung Hoon Sung, Willy Rachmady, Jack T. Kavalieros, Marko Radosavljevic |
2025-09-30 |
|
| 12432964 |
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology |
Glenn A. Glass, Anand S. Murthy, Robert Ehlert, Marko Radosavljevic, Nicole K. Thomas +1 more |
2025-09-30 |
|
| 12424589 |
Contiguous shield structures in microelectronic assemblies having hybrid bonding |
Beomseok Choi, Adel A. Elsherbini, Johanna M. Swan, Shawna M. Liff |
2025-09-23 |
|
| 12417978 |
Microelectronic assemblies having backside die-to-package interconnects |
Adel A. Elsherbini, Kimin Jun, Shawna M. Liff, Johanna M. Swan |
2025-09-16 |
|
| 12396232 |
III-N diodes with n-doped wells and capping layers |
Richard Geiger, Georgios Panagopoulos, Luis-Felipe Giles, Peter Baumgartner, Harald Gossner +2 more |
2025-08-19 |
|
| 12381039 |
High voltage metal insulator metal (MIM) capacitor |
Marko Radosavljevic |
2025-08-05 |
|
| 12336268 |
Gallium nitride (GaN) integrated circuit technology |
Nicole K. Thomas, Samuel James BADER, Marko Radosavljevic, Pratik KOIRALA, Nityan NAIR |
2025-06-17 |
|
| 12302618 |
Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology |
Samuel James BADER, Pratik KOIRALA, Nicole K. Thomas, Marko Radosavljevic |
2025-05-13 |
|
| 12292608 |
Gallium nitride (GaN) integrated circuit technology with optical communication |
Marko Radosavljevic, Nicole K. Thomas, Pratik KOIRALA, Nityan NAIR, Paul B. Fischer |
2025-05-06 |
|
| 12199018 |
Direct bonding in microelectronic assemblies |
Adel A. Elsherbini, Krishna Bharath, Kimin Jun, Aleksandar Aleksov, Mohammad Enamul Kabir +3 more |
2025-01-14 |
|
| 12156473 |
Inductor/core assemblies for integrated circuits |
Kevin Lin, Nicholas James Harold McKubre |
2024-11-26 |
$26,820,000 |
| 12148757 |
Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material |
Nidhi Nidhi, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-11-19 |
$25,575,000 |
| 12148747 |
Gallium nitride (GAN) three-dimensional integrated circuit technology |
Marko Radosavljevic, Pratik KOIRALA, Nicole K. Thomas, Paul B. Fischer, Adel A. Elsherbini +5 more |
2024-11-19 |
$25,575,000 |
| 12148690 |
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances |
Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner |
2024-11-19 |
|
| 12125888 |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
Marko Radosavljevic, Sansaptak Dasgupta |
2024-10-22 |
$18,859,000 |
| 12107060 |
Microelectronic assemblies with inductors in direct bonding regions |
Adel A. Elsherbini, Zhiguo Qian, Gerald Pasdast, Mohammad Enamul Kabir, Kimin Jun +5 more |
2024-10-01 |
$20,560,000 |
| 12080763 |
Silicide for group III-nitride devices and methods of fabrication |
Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez |
2024-09-03 |
$14,017,000 |
| 12062631 |
Microelectronic assemblies with inductors in direct bonding regions |
Adel A. Elsherbini, Krishna Bharath, Kevin P. O'Brien, Kimin Jun, Mohammad Enamul Kabir +5 more |
2024-08-13 |
$26,861,000 |
| 12034085 |
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers |
Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more |
2024-07-09 |
$24,938,000 |
| 12027613 |
III-N transistor arrangements for reducing nonlinearity of off-state capacitance |
Nidhi Nidhi, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-07-02 |
$27,114,000 |
| 11942378 |
Tunnel polarization junction III-N transistors |
Marko Radosavljevic, Sansaptak Dasgupta |
2024-03-26 |
$33,708,000 |
| 11894465 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2024-02-06 |
$88,011,000 |
| 11881511 |
Superlattice FINFET with tunable drive current capability |
Nidhi Nidhi, Rahul Ramaswamy, Sansaptak Dasgupta, Marko Radosavljevic, Johann Christian Rode +2 more |
2024-01-23 |
$52,361,000 |
| 11848362 |
III-N transistors with contacts of modified widths |
Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Marko Radosavljevic +1 more |
2023-12-19 |
$50,836,000 |
| 11799057 |
Group III-nitride light emitting devices including a polarization junction |
Sansaptak Dasgupta, Marko Radosavljevic |
2023-10-24 |
$20,059,000 |
