Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication

Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication

US Patent 12125888 · Granted Oct 22, 2024

Estimated economic value: $18,859,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate-to-gate isolation for stacked transistor architecture via non-selective die2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Contiguous shield structures in microelectronic assemblies having hybrid bonding2025
Microelectronic assemblies having backside die-to-package interconnects2025
Probabilistic computing devices based on stochastic switching in a ferroelectric2025
III-N diodes with n-doped wells and capping layers2025
III-N diodes with n-doped wells and capping layers2025
III-N diodes with n-doped wells and capping layers2025