Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate-to-gate isolation for stacked transistor architecture via non-selective dielectric deposition structure

Gate-to-gate isolation for stacked transistor architecture via non-selective dielectric deposition structure

US Patent 12471363 · Granted Nov 11, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Trench-based quantum dot devices with conductive liners2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Probabilistic computing devices based on stochastic switching in a ferroelectric2025
III-N diodes with n-doped wells and capping layers2025
High voltage metal insulator metal (MIM) capacitor2025
Gate-to-gate isolation for stacked transistor architecture via selective dielect2025
Gate-to-gate isolation for stacked transistor architecture via selective dielect2025
Asymmetric gate structures and contacts for stacked transistors2025