| 12396232 |
III-N diodes with n-doped wells and capping layers |
Richard Geiger, Georgios Panagopoulos, Luis-Felipe Giles, Peter Baumgartner, Harald Gossner +2 more |
2025-08-19 |
|
| 12148690 |
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances |
Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner |
2024-11-19 |
|
| 12148757 |
Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material |
Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-11-19 |
$25,575,000 |
| 12125888 |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
Marko Radosavljevic, Han Wui Then |
2024-10-22 |
$18,859,000 |
| 12080763 |
Silicide for group III-nitride devices and methods of fabrication |
Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez |
2024-09-03 |
$14,017,000 |
| 12034085 |
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers |
Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more |
2024-07-09 |
$24,938,000 |
| 12027613 |
III-N transistor arrangements for reducing nonlinearity of off-state capacitance |
Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-07-02 |
$27,114,000 |
| 11942378 |
Tunnel polarization junction III-N transistors |
Han Wui Then, Marko Radosavljevic |
2024-03-26 |
$33,708,000 |
| 11908687 |
III-N multichip modules and methods of fabrication |
Khaled Ahmed, Anup Pancholi, John Heck, Thomas L. Sounart, Harel Frish |
2024-02-20 |
$26,968,000 |
| 11881511 |
Superlattice FINFET with tunable drive current capability |
Nidhi Nidhi, Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Johann Christian Rode +2 more |
2024-01-23 |
$52,361,000 |
| 11848362 |
III-N transistors with contacts of modified widths |
Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Han Wui Then +1 more |
2023-12-19 |
$50,836,000 |
| 11799057 |
Group III-nitride light emitting devices including a polarization junction |
Han Wui Then, Marko Radosavljevic |
2023-10-24 |
$20,059,000 |
| 11791221 |
Integration of III-N transistors and semiconductor layer transfer |
Marko Radosavljevic, Han Wui Then, Paul B. Fischer |
2023-10-17 |
$15,641,000 |
| 11784121 |
Integrated circuit components with dummy structures |
Kevin Lin, Nicholas James Harold McKubre, Richard Vreeland |
2023-10-10 |
$20,947,000 |
| 11777022 |
Transistors including first and second semiconductor materials between source and drain regions and methods of manufacturing the same |
Marko Radosavljevic, Han Wui Then |
2023-10-03 |
$24,984,000 |
| 11757027 |
E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown |
Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Paul B. Fischer +2 more |
2023-09-12 |
$19,004,000 |
| 11728346 |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
Marko Radosavljevic, Han Wui Then |
2023-08-15 |
$18,845,000 |
| 11715790 |
Charge-induced threshold voltage tuning in III-N transistors |
Nidhi Nidhi, Marko Radosavljevic, Yang Cao, Han Wui Then, Johann Christian Rode +3 more |
2023-08-01 |
$26,467,000 |
| 11715791 |
Group III-Nitride devices on SOI substrates having a compliant layer |
Marko Radosavljevic, Han Wui Then, Kevin Lin, Paul B. Fischer |
2023-08-01 |
$26,467,000 |
| 11715799 |
Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping |
Marko Radosavljevic, Han Wui Then |
2023-08-01 |
$26,467,000 |
| 11710765 |
High aspect ratio non-planar capacitors formed via cavity fill |
Marko Radosavljevic, Han Wui Then |
2023-07-25 |
$28,608,000 |
| 11705882 |
Acoustic resonator structure |
Paul B. Fischer, Mark Radosavljevic, Han Wui Then |
2023-07-18 |
$21,060,000 |
| 11699704 |
Monolithic integration of a thin film transistor over a complimentary transistor |
Van H. Le, Marko Radosavljevic, Han Wui Then, Willy Rachmady, Ravi Pillarisetty +2 more |
2023-07-11 |
$21,736,000 |
| 11670637 |
Logic circuit with indium nitride quantum well |
Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez |
2023-06-06 |
$21,341,000 |
| 11670686 |
III-N nanostructures formed via cavity fill |
Marko Radosavljevic, Han Wui Then |
2023-06-06 |
$21,341,000 |
