Issued Patents All Time
Showing 25 most recent of 216 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12396232 | III-N diodes with n-doped wells and capping layers | Richard Geiger, Georgios Panagopoulos, Luis-Felipe Giles, Peter Baumgartner, Harald Gossner +2 more | 2025-08-19 |
| 12148690 | Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances | Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner | 2024-11-19 |
| 12148757 | Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material | Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Rahul Ramaswamy +2 more | 2024-11-19 |
| 12125888 | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication | Marko Radosavljevic, Han Wui Then | 2024-10-22 |
| 12080763 | Silicide for group III-nitride devices and methods of fabrication | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2024-09-03 |
| 12034085 | Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers | Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more | 2024-07-09 |
| 12027613 | III-N transistor arrangements for reducing nonlinearity of off-state capacitance | Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Rahul Ramaswamy +2 more | 2024-07-02 |
| 11942378 | Tunnel polarization junction III-N transistors | Han Wui Then, Marko Radosavljevic | 2024-03-26 |
| 11908687 | III-N multichip modules and methods of fabrication | Khaled Ahmed, Anup Pancholi, John Heck, Thomas L. Sounart, Harel Frish | 2024-02-20 |
| 11881511 | Superlattice FINFET with tunable drive current capability | Nidhi Nidhi, Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Johann Christian Rode +2 more | 2024-01-23 |
| 11848362 | III-N transistors with contacts of modified widths | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Han Wui Then +1 more | 2023-12-19 |
| 11799057 | Group III-nitride light emitting devices including a polarization junction | Han Wui Then, Marko Radosavljevic | 2023-10-24 |
| 11791221 | Integration of III-N transistors and semiconductor layer transfer | Marko Radosavljevic, Han Wui Then, Paul B. Fischer | 2023-10-17 |
| 11784121 | Integrated circuit components with dummy structures | Kevin Lin, Nicholas James Harold McKubre, Richard Vreeland | 2023-10-10 |
| 11777022 | Transistors including first and second semiconductor materials between source and drain regions and methods of manufacturing the same | Marko Radosavljevic, Han Wui Then | 2023-10-03 |
| 11757027 | E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Paul B. Fischer +2 more | 2023-09-12 |
| 11728346 | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication | Marko Radosavljevic, Han Wui Then | 2023-08-15 |
| 11715790 | Charge-induced threshold voltage tuning in III-N transistors | Nidhi Nidhi, Marko Radosavljevic, Yang Cao, Han Wui Then, Johann Christian Rode +3 more | 2023-08-01 |
| 11715791 | Group III-Nitride devices on SOI substrates having a compliant layer | Marko Radosavljevic, Han Wui Then, Kevin Lin, Paul B. Fischer | 2023-08-01 |
| 11715799 | Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping | Marko Radosavljevic, Han Wui Then | 2023-08-01 |
| 11710765 | High aspect ratio non-planar capacitors formed via cavity fill | Marko Radosavljevic, Han Wui Then | 2023-07-25 |
| 11705882 | Acoustic resonator structure | Paul B. Fischer, Mark Radosavljevic, Han Wui Then | 2023-07-18 |
| 11699704 | Monolithic integration of a thin film transistor over a complimentary transistor | Van H. Le, Marko Radosavljevic, Han Wui Then, Willy Rachmady, Ravi Pillarisetty +2 more | 2023-07-11 |
| 11670637 | Logic circuit with indium nitride quantum well | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2023-06-06 |
| 11670686 | III-N nanostructures formed via cavity fill | Marko Radosavljevic, Han Wui Then | 2023-06-06 |