Issued Patents All Time
Showing 26–50 of 216 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11670637 | Logic circuit with indium nitride quantum well | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2023-06-06 |
| 11671075 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic | 2023-06-06 |
| 11664417 | III-N metal-insulator-semiconductor field effect transistors with multiple gate dielectric materials | Walid M. Hafez, Han Wui Then, Marko Radosavljevic, Paul B. Fischer | 2023-05-30 |
| 11658217 | Transistors with ion- or fixed charge-based field plate structures | Han Wui Then, Marko Radosavljevic, Glenn A. Glass, Nidhi Nidhi, Paul B. Fischer +3 more | 2023-05-23 |
| 11652143 | III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics | Han Wui Then, Nidhi Nidhi, Paul B. Fischer, Rahul Ramaswamy, Walid M. Hafez +4 more | 2023-05-16 |
| 11637093 | Micro light-emitting diode display fabrication and assembly | Khaled Ahmed, Anup Pancholi, Chad Eric Mair | 2023-04-25 |
| 11626513 | Antenna gate field plate on 2DEG planar FET | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Paul B. Fischer +3 more | 2023-04-11 |
| 11616488 | FBAR devices having multiple epitaxial layers stacked on a same substrate | Paul B. Fischer, Han Wui Then, Marko Radosavljevic | 2023-03-28 |
| 11610887 | Side-by-side integration of III-n transistors and thin-film transistors | Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2023-03-21 |
| 11610971 | Cap layer on a polarization layer to preserve channel sheet resistance | Marko Radosavljevic, Han Wui Then, Nidhi Nidhi, Rahul Ramaswamy, Johann Christian Rode +2 more | 2023-03-21 |
| 11588037 | Planar transistors with wrap-around gates and wrap-around source and drain contacts | Nidhi Nidhi, Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Johann Christian Rode +2 more | 2023-02-21 |
| 11587862 | Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances | Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner | 2023-02-21 |
| 11581313 | Integration of III-N transistors and non-III-N transistors by semiconductor regrowth | Johann Christian Rode, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Nidhi Nidhi +3 more | 2023-02-14 |
| 11575036 | Gallium nitride transistors with source and drain field plates and their methods of fabrication | Han Wui Then, Stephan Leuschner, Marko Radosavljevic | 2023-02-07 |
| 11563098 | Transistor gate shape structuring approaches | Marko Radosavljevic, Han Wui Then, Paul B. Fischer | 2023-01-24 |
| 11558032 | RF filters and resonators of crystalline III-N films | Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic | 2023-01-17 |
| 11557667 | Group III-nitride devices with improved RF performance and their methods of fabrication | Marko Radosavljevic, Han Wui Then, Ibrahim Ban, Paul B. Fischer | 2023-01-17 |
| 11552075 | Group III-nitride (III-N) devices and methods of fabrication | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2023-01-10 |
| 11545586 | Group III-nitride Schottky diode | Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more | 2023-01-03 |
| 11538901 | Capacitor including multilayer dielectric stack | Han Wui Then, Marko Radosavljevic | 2022-12-27 |
| 11538804 | Stacked integration of III-N transistors and thin-film transistors | Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2022-12-27 |
| 11527532 | Enhancement-depletion cascode arrangements for enhancement mode III-N transistors | Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Rahul Ramaswamy +2 more | 2022-12-13 |
| 11527610 | CMOS compatible isolation leakage improvements in gallium nitride transistors | Marko Radosavljevic, Han Wui Then | 2022-12-13 |
| 11521964 | Schottky diode structures and integration with III-V transistors | Han Wui Then, Paul B. Fischer, Walid M. Hafez, Marko Radosavljevic | 2022-12-06 |
| 11515407 | High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS | Glenn A. Glass, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Anand S. Murthy +1 more | 2022-11-29 |