Issued Patents All Time
Showing 51–75 of 216 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515402 | Microelectronic transistor source/drain formation using angled etching | Seung Hoon Sung, Robert Turkot, Marko Radosavljevic, Han Wui Then, Willy Rachmady +1 more | 2022-11-29 |
| 11508812 | Multi-step lateral epitaxial overgrowth for low defect density III-N films | Han Wui Then, Marko Radosavljevic, Pavel M. Agababov | 2022-11-22 |
| 11508824 | Gallium nitride transistors with multiple threshold voltages and their methods of fabrication | Han Wui Then, Marko Radosavljevic | 2022-11-22 |
| 11502124 | Filter-centric III-N films enabling RF filter integration with III-N transistors | Han Wui Then, Paul B. Fischer, Zdravko Boos, Marko Radosavljevic | 2022-11-15 |
| 11482644 | Nanowire light emitting diodes with high extraction efficiency for micro LED displays | Khaled Ahmed, Ivan-Christophe Robin | 2022-10-25 |
| 11476345 | Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performance | Han Wui Then, Marko Radosavljevic | 2022-10-18 |
| 11450617 | Transmission line structures for III-N devices | Han Wui Then, Marko Radosavljevic, Nidhi Nidhi, Paul B. Fischer, Rahul Ramaswamy +2 more | 2022-09-20 |
| 11437504 | Complementary group III-nitride transistors with complementary polarization junctions | Han Wui Then, Marko Radosavljevic | 2022-09-06 |
| 11437255 | Epitaxial III-N nanoribbon structures for device fabrication | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Kevin Lin | 2022-09-06 |
| 11430873 | Self aligned gate connected plates for group III-Nitride devices and methods of fabrication | Walid M. Hafez, Han Wui Then, Marko Radosavljevic, Paul B. Fischer | 2022-08-30 |
| 11404407 | Implants to enlarge Schottky diode cross-sectional area for lateral current conduction | Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2022-08-02 |
| 11387329 | Tri-gate architecture multi-nanowire confined transistor | Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2022-07-12 |
| 11387328 | III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device | Rahul Ramaswamy, Walid M. Hafez, Marko Radosavljevic, Han Wui Then, Nidhi Nidhi | 2022-07-12 |
| 11387327 | Silicide for group III-Nitride devices and methods of fabrication | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2022-07-12 |
| 11380806 | Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers | Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more | 2022-07-05 |
| 11380679 | FET capacitor circuit architectures for tunable load and input matching | Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez, Nicholas James Harold McKubre | 2022-07-05 |
| 11373995 | Group III-nitride antenna diode | Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more | 2022-06-28 |
| 11362172 | High aspect ratio non-planar capacitors formed via cavity fill | Marko Radosavljevic, Han Wui Then | 2022-06-14 |
| 11362082 | Implanted substrate contact for in-process charging control | Han Wui Then, Paul B. Fischer, Walid M. Hafez, Marko Radosavljevic | 2022-06-14 |
| 11355652 | Group III-nitride polarization junction diodes | Han Wui Then, Marko Radosavljevic | 2022-06-07 |
| 11342232 | Fabrication of Schottky barrier diode using lateral epitaxial overgrowth | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2022-05-24 |
| 11335801 | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication | Marko Radosavljevic, Han Wui Then | 2022-05-17 |
| 11335800 | Work function based approaches to transistor threshold voltage tuning | Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2022-05-17 |
| 11335777 | Integrated circuit components with substrate cavities | Kevin Lin, Paul B. Fischer, Han Wui Then, Marko Radosavljevic, Ibrahim Ban | 2022-05-17 |
| 11329132 | Transistor with polarization layer superlattice for target threshold voltage tuning | Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez | 2022-05-10 |