Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515402 | Microelectronic transistor source/drain formation using angled etching | Seung Hoon Sung, Marko Radosavljevic, Han Wui Then, Willy Rachmady, Sansaptak Dasgupta +1 more | 2022-11-29 |
| 8017568 | Cleaning residues from semiconductor structures | Shan Clark, Vijayakumar Ramachandrarao | 2011-09-13 |
| 7387927 | Reducing oxidation under a high K gate dielectric | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Uday Shah +2 more | 2008-06-17 |
| 7233068 | Filling small dimension vias using supercritical carbon dioxide | Vijayakumar Ramachandrarao | 2007-06-19 |
| 7129182 | Method for etching a thin metal layer | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +1 more | 2006-10-31 |
| 7056780 | Etching metal silicides and germanides | Justin K. Brask | 2006-06-06 |
| 7045428 | Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a P/N junction | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Uday Shah +3 more | 2006-05-16 |
| 7037845 | Selective etch process for making a semiconductor device having a high-k gate dielectric | Justin K. Brask, Uday Shah, Mark L. Doczy, Jack T. Kavalieros, Robert S. Chau +1 more | 2006-05-02 |
| 7022655 | Highly polar cleans for removal of residues from semiconductor structures | Justin K. Brask, Vijayakumar Ramachandrarao | 2006-04-04 |
| 6974764 | Method for making a semiconductor device having a metal gate electrode | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +1 more | 2005-12-13 |
| 6896774 | Acoustic streaming of condensate during sputtered metal vapor deposition | Justin K. Brask, Mark L. Doczy | 2005-05-24 |
| 6812132 | Filling small dimension vias using supercritical carbon dioxide | Vijayakumar Ramachandrarao | 2004-11-02 |
| 6624127 | Highly polar cleans for removal of residues from semiconductor structures | Justin K. Brask, Vijayakumar Ramachandrarao | 2003-09-23 |