| 8080475 |
Removal chemistry for selectively etching metal hard mask |
Kanwal Jit Singh |
2011-12-20 |
$34,401,000 |
| 8017568 |
Cleaning residues from semiconductor structures |
Shan Clark, Robert Turkot |
2011-09-13 |
$15,671,000 |
| 7977228 |
Methods for the formation of interconnects separated by air gaps |
— |
2011-07-12 |
$25,282,000 |
| 7605073 |
Sealants for metal interconnect protection in microelectronic devices having air gap interconnect structures |
Adrien LaVoie, Arnel M. Fajardo |
2009-10-20 |
$20,186,000 |
| 7422020 |
Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric |
Grant Kloster |
2008-09-09 |
$18,766,000 |
| 7374867 |
Enhancing photoresist performance using electric fields |
Robert L. Bristol, Heidi Cao, Manish Chandhok, Robert Meagley |
2008-05-20 |
$25,766,000 |
| 7335586 |
Sealing porous dielectric material using plasma-induced surface polymerization |
Boyan Boyanov, Grant Kloster, Hyun-Mog Park |
2008-02-26 |
$16,748,000 |
| 7303648 |
Via etch process |
Hyun-Mog Park |
2007-12-04 |
$21,616,000 |
| 7268015 |
Method for wafer stacking using copper structures of substantially uniform height |
Shriram Ramanathan |
2007-09-11 |
$15,808,000 |
| 7238604 |
Forming thin hard mask over air gap or porous dielectric |
Grant Kloster, Kevin P. O'Brien, David H. Gracias, Hyun-Mog Park |
2007-07-03 |
$20,127,000 |
| 7233068 |
Filling small dimension vias using supercritical carbon dioxide |
Robert Turkot |
2007-06-19 |
$30,093,000 |
| 7220668 |
Method of patterning a porous dielectric material |
Hyun-Mog Park, Boyan Boyanov, Grant Kloster |
2007-05-22 |
$18,006,000 |
| 7214605 |
Deposition of diffusion barrier |
Shriram Ramanathan, Grant Kloster, Patrick Morrow, Scott List |
2007-05-08 |
$17,693,000 |
| 7179757 |
Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
David H. Gracias |
2007-02-20 |
$9,940,000 |
| 7101443 |
Supercritical carbon dioxide-based cleaning of metal lines |
— |
2006-09-05 |
$13,820,000 |
| 7049053 |
Supercritical carbon dioxide to reduce line edge roughness |
Hyun-Mog Park, Subramanyam Iyer, Bob Turkot |
2006-05-23 |
$10,027,000 |
| 7038324 |
Wafer stacking using interconnect structures of substantially uniform height |
Shriram Ramanathan |
2006-05-02 |
$12,289,000 |
| 7022655 |
Highly polar cleans for removal of residues from semiconductor structures |
Justin K. Brask, Robert Turkot |
2006-04-04 |
$11,898,000 |
| 7018938 |
Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioning |
Subramanyam Iyer, Justin K. Brask |
2006-03-28 |
$11,012,000 |
| 7005390 |
Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
David H. Gracias |
2006-02-28 |
$11,249,000 |
| 6974762 |
Adhesion of carbon doped oxides by silanization |
David H. Gracias |
2005-12-13 |
$11,810,000 |
| 6812132 |
Filling small dimension vias using supercritical carbon dioxide |
Robert Turkot |
2004-11-02 |
$35,744,000 |
| 6624127 |
Highly polar cleans for removal of residues from semiconductor structures |
Justin K. Brask, Robert Turkot |
2003-09-23 |
$27,638,000 |
| 6620741 |
Method for controlling etch bias of carbon doped oxide films |
David H. Gracias, Hyun-Mog Park |
2003-09-16 |
$36,866,000 |
