Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Forming thin hard mask over air gap or porous dielectric

Forming thin hard mask over air gap or porous dielectric

US Patent 7238604 · Granted Jul 3, 2007

Estimated economic value: $20,127,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thin film transistors having strain-inducing structures integrated with 2D chann2025
Encapsulation for transition metal dichalcogenide nanosheet transistor and metho2025
Stacked 2D CMOS with inter metal layers2025
Backside wafer treatments to reduce distortions and overlay errors during wafer 2025
Digitally controlled lithographically-defined multi-frequency acoustic resonator2025
Integrated circuit structures with graphene contacts2025
Contact gating for 2D field effect transistors2025
Thin film transistors having semiconductor structures integrated with 2D channel2025
Semiconductor devices and manufacturing methods of the same2025
Semiconductor device and method of manufacturing the same2025
Transistors including two-dimensional materials2025
TMD inverted nanowire integration2025