Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology

Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology

US Patent 12302618 · Granted May 13, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate-to-gate isolation for stacked transistor architecture via non-selective die2025
Gate-to-gate isolation for stacked transistor architecture via non-selective die2025
Trench-based quantum dot devices with conductive liners2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Contiguous shield structures in microelectronic assemblies having hybrid bonding2025
Microelectronic assemblies having backside die-to-package interconnects2025