Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › III-N transistors with contacts of modified widths

III-N transistors with contacts of modified widths

US Patent 11848362 · Granted Dec 19, 2023

Estimated economic value: $50,836,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate-to-gate isolation for stacked transistor architecture via non-selective die2025
Plug and recess process for dual metal gate on stacked nanoribbon devices2025
Single gated 3D nanowire inverter for high density thick gate SoC applications2025
Drug delivery device, method of manufacture, and method of use2025
Gate structures to enable lower subthreshold slope in gallium nitride-based tran2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor 2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Contiguous shield structures in microelectronic assemblies having hybrid bonding2025
Microelectronic assemblies having backside die-to-package interconnects2025
Probabilistic computing devices based on stochastic switching in a ferroelectric2025