| 12388011 |
Top gate recessed channel CMOS thin film transistor and methods of fabrication |
Gilbert Dewey, Cory Bomberger, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more |
2025-08-12 |
|
| 12342574 |
Contact resistance reduction in transistor devices with metallization on both sides |
Koustav Ganguly, Subrina RAFIQUE, Glenn A. Glass, Anand S. Murthy, Ehren Mannebach +2 more |
2025-06-24 |
|
| 12342611 |
Source or drain structures with vertical trenches |
Nicholas G. Minutillo, Anand S. Murthy, Aaron A. Budrevich, Peter Wells |
2025-06-24 |
|
| 12288808 |
High aspect ratio source or drain structures with abrupt dopant profile |
Anand S. Murthy, Nicholas G. Minutillo, Suresh Vishwanath, Mohammad HASAN, Biswajeet Guha +1 more |
2025-04-29 |
|
| 12266570 |
Self-aligned interconnect structures and methods of fabrication |
Kimin Jun, Souvik Ghosh, Willy Rachmady, Ashish Agrawal, Siddharth Chouksey +5 more |
2025-04-01 |
|
| 12119387 |
Low resistance approaches for fabricating contacts and the resulting structures |
Gilbert Dewey, Nazila Haratipour, Siddharth Chouksey, Jack T. Kavalieros, Jitendra Kumar Jha +6 more |
2024-10-15 |
$19,078,000 |
| 12094881 |
Arsenic-doped epitaxial source/drain regions for NMOS |
Anand S. Murthy, Nicholas G. Minutillo, Ritesh Jhaveri |
2024-09-17 |
$19,251,000 |
| 11996404 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more |
2024-05-28 |
$30,739,000 |
| 11973143 |
Source or drain structures for germanium N-channel devices |
Benjamin Chu-Kung, Subrina RAFIQUE, Devin Merrill, Ashish Agrawal, Harold W. Kennel +4 more |
2024-04-30 |
$26,151,000 |
| 11935887 |
Source or drain structures with vertical trenches |
Nicholas G. Minutillo, Anand S. Murthy, Aaron A. Budrevich, Peter Wells |
2024-03-19 |
$28,784,000 |
| 11929320 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
Gilbert Dewey, Cory Bomberger, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more |
2024-03-12 |
$37,196,000 |
| 11804523 |
High aspect ratio source or drain structures with abrupt dopant profile |
Anand S. Murthy, Nicholas G. Minutillo, Suresh Vishwanath, Mohammad HASAN, Biswajeet Guha +1 more |
2023-10-31 |
$30,374,000 |
| 11610889 |
Arsenic-doped epitaxial, source/drain regions for NMOS |
Anand S. Murthy, Nicholas G. Minutillo, Ritesh Jhaveri |
2023-03-21 |
$20,076,000 |
| 11552169 |
Source or drain structures with phosphorous and arsenic co-dopants |
Anand S. Murthy, Nicholas G. Minutillo, Suresh Vishwanath |
2023-01-10 |
$14,061,000 |
| 11482621 |
Vertically stacked CMOS with upfront M0 interconnect |
Willy Rachmady, Patrick Morrow, Aaron D. Lilak, Rishabh Mehandru, Cheng-Ying Huang +4 more |
2022-10-25 |
$11,792,000 |
| 11328988 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
Gilbert Dewey, Cory Bomberger, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more |
2022-05-10 |
$19,182,000 |
| 11244943 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more |
2022-02-08 |
$27,206,000 |
| 11164785 |
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material |
Ashish Agrawal, Gilbert Dewey, Cheng-Ying Huang, Willy Rachmady, Anand S. Murthy +1 more |
2021-11-02 |
$26,002,000 |
