Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low resistance approaches for fabricating contacts and the resulting structures

Low resistance approaches for fabricating contacts and the resulting structures

US Patent 12119387 · Granted Oct 15, 2024

Estimated economic value: $19,078,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Package architecture of photonic system with vertically stacked dies having plan2025
Staggered vertically spaced integrated circuit line metallization with different2025
Capacitor with dual dielectric layers2025
Capacitor with dual dielectric layers2025
Subtractively patterned interconnect structures for integrated circuits2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Gate-all-around integrated circuit structures having underlying dopant-diffusion2025
Source or drain structures with relatively high germanium content2025
Integrated circuit devices with angled transistors formed based on angled wafers2025
Integrated circuit structures having ultra-high conductivity global routing2025
Conductive contacts wrapped around epitaxial source or drain regions2025