Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12362002 | Staggered read recovery for improved read window budget in a three dimensional (3D) NAND memory array | Rifat Ferdous, Sung-Taeg Kang, Rohit S. Shenoy, Ali Khakifirooz | 2025-07-15 |
| 12191349 | Reducing off-state leakage in semiconductor devices | Cory E. Weber, Justin R. Weber, Sean T. Ma, Harold W. Kennel, Seung Hoon Sung +3 more | 2025-01-07 |
| 11973143 | Source or drain structures for germanium N-channel devices | Ryan Keech, Benjamin Chu-Kung, Subrina RAFIQUE, Devin Merrill, Ashish Agrawal +4 more | 2024-04-30 |
| 11575005 | Asymmetrical semiconductor nanowire field-effect transistor | Seung Hoon Sung, Ashish Agrawal, Benjamin Chu-Kung, Siddharth Chouksey, Cory Bomberger +3 more | 2023-02-07 |
| 11424335 | Group III-V semiconductor devices having dual workfunction gate electrodes | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Cheng-Ying Huang | 2022-08-23 |
| 11362188 | Field effect transistors with reduced electric field by thickening dielectric on the drain side | Sean T. Ma, Willy Rachmady, Jack T. Kavalieros | 2022-06-14 |
| 11233148 | Reducing band-to-band tunneling in semiconductor devices | Benjamin Chu-Kung, Jack T. Kavalieros, Seung Hoon Sung, Siddharth Chouksey, Harold W. Kennel +4 more | 2022-01-25 |
| 11094716 | Source contact and channel interface to reduce body charging from band-to-band tunneling | Rishabh Mehandru, Seung Hoon Sung | 2021-08-17 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal, Benjamin Chu-Kung +3 more | 2021-06-01 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung, Harold W. Kennel +4 more | 2021-04-20 |
| 10930738 | Sub-fin leakage control in semicondcutor devices | Seung Hoon Sung, Glenn A. Glass, Jack T. Kavalieros, Tahir Ghani | 2021-02-23 |
| 8785909 | Non-planar semiconductor device having channel region with low band-gap cladding layer | Marko Radosavljevic, Gilbert Dewey, Benjamin Chu-Kung, Sanaz K. Gardner, Satyarth Suri +4 more | 2014-07-22 |