Issued Patents All Time
Showing 51–75 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11171058 | Self-aligned 3-D epitaxial structures for MOS device fabrication | Daniel B. Aubertine, Anand S. Murthy, Gaurav Thareja, Tahir Ghani | 2021-11-09 |
| 11152361 | Techniques for achieving multiple transistor fin dimensions on a single die | Anand S. Murthy | 2021-10-19 |
| 11121030 | Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch | Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more | 2021-09-14 |
| 11107920 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Anand S. Murthy, Saurabh Morarka, Chandra S. Mohapatra | 2021-08-31 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-08-24 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2021-08-24 |
| 11094785 | Deuterium-based passivation of non-planar transistor interfaces | Prashant Majhi, Anand S. Murthy, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more | 2021-08-17 |
| 11081570 | Transistors with lattice matched gate structure | Karthik Jambunathan, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-08-03 |
| 11069795 | Transistors with channel and sub-channel regions with distinct compositions and dimensions | Karthik Jambunathan, Anand S. Murthy, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more | 2021-07-20 |
| 11056592 | Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer | Karthik Jambunathan, Cory Bomberger, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2021-07-06 |
| 11024737 | Etching fin core to provide fin doubling | Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan | 2021-06-01 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Harold W. Kennel, Ashish Agrawal, Benjamin Chu-Kung +3 more | 2021-06-01 |
| 11011620 | Techniques for increasing channel region tensile strain in n-MOS devices | Rishabh Mehandru, Cory E. Weber, Anand S. Murthy, Karthik Jambunathan, Jiong Zhang +2 more | 2021-05-18 |
| 11004978 | Methods of forming doped source/drain contacts and structures formed thereby | Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim | 2021-05-11 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Karthik Jambunathan, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-05-11 |
| 10998270 | Local interconnect for group IV source/drain regions | Seung Hoon Sung, Van H. Le, Ashish Agrawal, Benjamin Chu-Kung, Anand S. Murthy +1 more | 2021-05-04 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung +4 more | 2021-04-20 |
| 10978568 | Passivation of transistor channel region interfaces | Mark R. Brazier, Anand S. Murthy, Tahir Ghani, Owen Loh | 2021-04-13 |
| 10944006 | Geometry tuning of fin based transistor | Anand S. Murthy, Karthik Jambunathan, Chandra S. Mohapatra, Hei Kam, Nabil G. Mistkawi +2 more | 2021-03-09 |
| 10930738 | Sub-fin leakage control in semicondcutor devices | Dipanjan Basu, Seung Hoon Sung, Jack T. Kavalieros, Tahir Ghani | 2021-02-23 |
| 10892337 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky | 2021-01-12 |
| 10886408 | Group III-V material transistors employing nitride-based dopant diffusion barrier layer | Chandra S. Mohapatra, Harold W. Kennel, Willy Rachmady, Anand S. Murthy, Gilbert Dewey +4 more | 2021-01-05 |
| 10879241 | Techniques for controlling transistor sub-fin leakage | Prashant Majhi, Anand S. Murthy, Tahir Ghani, Daniel B. Aubertine, Heidi M. Meyer +2 more | 2020-12-29 |
| 10879353 | Selective germanium P-contact metalization through trench | Anand S. Murthy, Tahir Ghani | 2020-12-29 |
| 10854752 | High mobility strained channels for fin-based NMOS transistors | Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Willy Rachmady +1 more | 2020-12-01 |