Issued Patents All Time
Showing 76–100 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10833076 | Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse | Nabil G. Mistkawi | 2020-11-10 |
| 10818793 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more | 2020-10-27 |
| 10811496 | Transistor devices having source/drain structure configured with high germanium content portion | Anand S. Murthy | 2020-10-20 |
| 10755984 | Replacement channel etch for high quality interface | Ying-Feng PANG, Nabil G. Mistkawi, Anand S. Murthy, Tahir Ghani, Huang-Lin Chao | 2020-08-25 |
| 10749032 | Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers | Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more | 2020-08-18 |
| 10734412 | Backside contact resistance reduction for semiconductor devices with metallization on both sides | Anand S. Murthy, Karthik Jambunathan, Chandra S. Mohapatra, Mauro J. Kobrinsky, Patrick Morrow | 2020-08-04 |
| 10700178 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Anand S. Murthy, Tahir Ghani | 2020-06-30 |
| 10692973 | Germanium-rich channel transistors including one or more dopant diffusion barrier elements | Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2020-06-23 |
| 10692974 | Deuterium-based passivation of non-planar transistor interfaces | Prashant Majhi, Anand S. Murthy, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more | 2020-06-23 |
| 10672868 | Methods of forming self aligned spacers for nanowire device structures | Karthik Jambunathan, Anand S. Murthy, Jun Sung Kang, Seiyon Kim | 2020-06-02 |
| 10651288 | Pseudomorphic InGaAs on GaAs for gate-all-around transistors | Chandra S. Mohapatra, Anand S. Murthy, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more | 2020-05-12 |
| 10644112 | Systems, methods and devices for isolation for subfin leakage | Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal +5 more | 2020-05-05 |
| 10586848 | Apparatus and methods to create an active channel having indium rich side and bottom surfaces | Chandra S. Mohapatra, Anand S. Murthy, Matthew V. Metz, Willy Rachmady, Gilbert Dewey +2 more | 2020-03-10 |
| 10573750 | Methods of forming doped source/drain contacts and structures formed thereby | Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim | 2020-02-25 |
| 10559689 | Crystallized silicon carbon replacement material for NMOS source/drain regions | Karthik Jambunathan, Anand S. Murthy, Jacob Jensen, Daniel B. Aubertine, Chandra S. Mohapatra | 2020-02-11 |
| 10559683 | Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors | Chandra S. Mohapatra, Anand S. Murthy, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more | 2020-02-11 |
| 10553680 | Selective germanium P-contact metalization through trench | Anand S. Murthy, Tahir Ghani | 2020-02-04 |
| 10541334 | Techniques for integration of Ge-rich p-MOS source/drain | Anand S. Murthy, Tahir Ghani, Ying-Feng PANG, Nabil G. Mistkawi | 2020-01-21 |
| 10535735 | Contact resistance reduced P-MOS transistors employing Ge-rich contact layer | Anand S. Murthy | 2020-01-14 |
| 10529808 | Dopant diffusion barrier for source/drain to curb dopant atom diffusion | Chandra S. Mohapatra, Harold W. Kennel, Will Rachmady, Gilbert Dewey, Jack T. Kavalieros +4 more | 2020-01-07 |
| 10516021 | Reduced leakage transistors with germanium-rich channel regions | Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim, Jun Sung Kang | 2019-12-24 |
| 10510848 | Sub-fin sidewall passivation in replacement channel FinFETS | Ying-Feng PANG, Anand S. Murthy, Tahir Ghani, Karthik Jambunathan | 2019-12-17 |
| 10483353 | Transistor including tensile-strained germanium channel | Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more | 2019-11-19 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Willy Rachmady, Jack T. Kavalieros +2 more | 2019-10-29 |
| 10418464 | Techniques for forming transistors on the same die with varied channel materials | Anand S. Murthy, Hei Kam, Tahir Ghani, Karthik Jambunathan, Chandra S. Mohapatra | 2019-09-17 |