SC

Stephen M. Cea

IN Intel: 120 patents #141 of 30,777Top 1%
Google: 3 patents #8,000 of 22,993Top 35%
SO Sony: 2 patents #12,963 of 25,231Top 55%
DP Daedalus Prime: 1 patents #13 of 21Top 65%
📍 Hillsboro, OR: #7 of 2,365 inventorsTop 1%
🗺 Oregon: #136 of 28,073 inventorsTop 1%
Overall (All Time): #8,874 of 4,157,543Top 1%
126
Patents All Time

Issued Patents All Time

Showing 76–100 of 126 patents

Patent #TitleCo-InventorsDate
10109711 CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more 2018-10-23
10074573 CMOS nanowire structure Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Annalisa Cappellani +2 more 2018-09-11
10026829 Semiconductor device with isolated body portion Annalisa Cappellani, Tahir Ghani, Harry Gomez, Jack T. Kavalieros, Patrick H. Keys +5 more 2018-07-17
9935107 CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same Roza Kotlyar, Harold W. Kennel, Kelin J. Kuhn, Tahir Ghani 2018-04-03
9911835 Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs Roza Kotlyar, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more 2018-03-06
9905650 Uniaxially strained nanowire structure Seiyon Kim, Annalisa Cappellani 2018-02-27
9905651 GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more 2018-02-27
9893149 High mobility strained channels for fin-based transistors Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more 2018-02-13
9711598 Two-dimensional condensation for uniaxially strained semiconductor fins Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn 2017-07-18
9680013 Non-planar device having uniaxially strained semiconductor body and method of making same Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more 2017-06-13
9673302 Conversion of strain-inducing buffer to electrical insulator Annalisa Cappellani, Van H. Le, Glenn A. Glass, Kelin J. Kuhn 2017-06-06
9608059 Semiconductor device with isolated body portion Annalisa Cappellani, Tahir Ghani, Harry Gomez, Jack T. Kavalieros, Patrick H. Keys +5 more 2017-03-28
9595581 Silicon and silicon germanium nanowire structures Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Martin D. Giles, Annalisa Cappellani +3 more 2017-03-14
9583491 CMOS nanowire structure Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Annalisa Cappellani +2 more 2017-02-28
9583602 Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs Roza Kotlyar, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more 2017-02-28
9570614 Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more 2017-02-14
9564522 Nanowire structures having non-discrete source and drain regions Annalisa Cappellani, Martin D. Giles, Rafael Rios, Seiyon Kim, Kelin J. Kuhn 2017-02-07
9490320 Uniaxially strained nanowire structure Seiyon Kim, Annalisa Cappellani 2016-11-08
9472613 Conversion of strain-inducing buffer to electrical insulator Annalisa Cappellani, Van H. Le, Glenn A. Glass, Kelin J. Kuhn 2016-10-18
9419140 Two-dimensional condensation for uniaxially strained semiconductor fins Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn 2016-08-16
9412872 N-type and P-type tunneling field effect transistors (TFETs) Roza Kotlyar, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more 2016-08-09
9224810 CMOS nanowire structure Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Annalisa Cappellani +2 more 2015-12-29
9224808 Uniaxially strained nanowire structure Seiyon Kim, Annalisa Cappellani 2015-12-29
9184294 High mobility strained channels for fin-based transistors Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +1 more 2015-11-10
9159835 Two-dimensional condensation for uniaxially strained semiconductor fins Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn 2015-10-13