Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11004978 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim | 2021-05-11 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-05-11 |
| 10944006 | Geometry tuning of fin based transistor | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Hei Kam, Nabil G. Mistkawi +2 more | 2021-03-09 |
| 10892337 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky | 2021-01-12 |
| 10879241 | Techniques for controlling transistor sub-fin leakage | Glenn A. Glass, Prashant Majhi, Anand S. Murthy, Tahir Ghani, Daniel B. Aubertine +2 more | 2020-12-29 |
| 10749032 | Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +2 more | 2020-08-18 |
| 10734412 | Backside contact resistance reduction for semiconductor devices with metallization on both sides | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Mauro J. Kobrinsky, Patrick Morrow | 2020-08-04 |
| 10692973 | Germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2020-06-23 |
| 10672868 | Methods of forming self aligned spacers for nanowire device structures | Glenn A. Glass, Anand S. Murthy, Jun Sung Kang, Seiyon Kim | 2020-06-02 |
| 10573750 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim | 2020-02-25 |
| 10559689 | Crystallized silicon carbon replacement material for NMOS source/drain regions | Glenn A. Glass, Anand S. Murthy, Jacob Jensen, Daniel B. Aubertine, Chandra S. Mohapatra | 2020-02-11 |
| 10516021 | Reduced leakage transistors with germanium-rich channel regions | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim, Jun Sung Kang | 2019-12-24 |
| 10510848 | Sub-fin sidewall passivation in replacement channel FinFETS | Glenn A. Glass, Ying-Feng PANG, Anand S. Murthy, Tahir Ghani | 2019-12-17 |
| 10483353 | Transistor including tensile-strained germanium channel | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +2 more | 2019-11-19 |
| 10418464 | Techniques for forming transistors on the same die with varied channel materials | Glenn A. Glass, Anand S. Murthy, Hei Kam, Tahir Ghani, Chandra S. Mohapatra | 2019-09-17 |
| 10403752 | Prevention of subchannel leakage current in a semiconductor device with a fin structure | Glenn A. Glass, Chandra S. Mohapatra, Anand S. Murthy, Stephen M. Cea, Tahir Ghani | 2019-09-03 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more | 2019-08-06 |
| 9997414 | Ge/SiGe-channel and III-V-channel transistors on the same die | Glenn A. Glass, Anand S. Murthy | 2018-06-12 |