Issued Patents All Time
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11450739 | Germanium-rich nanowire transistor with relaxed buffer layer | Glenn A. Glass, Anand S. Murthy, Tahir Ghani, Jack T. Kavalieros, Siddharth Chouksey +3 more | 2022-09-20 |
| 11430787 | Forming crystalline source/drain contacts on semiconductor devices | Karthik Jambunathan, Scott Maddox, Anand S. Murthy | 2022-08-30 |
| 11404575 | Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2022-08-02 |
| 11374100 | Source or drain structures with contact etch stop layer | Rishabh Mehandru, Anupama Bowonder, Biswajeet Guha, Anand S. Murthy, Tahir Ghani | 2022-06-28 |
| 11328988 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more | 2022-05-10 |
| 11264501 | Device, method and system for promoting channel stress in a NMOS transistor | Rishabh Mehandru, Anand S. Murthy, Karthik Jambunathan | 2022-03-01 |
| 11244943 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more | 2022-02-08 |
| 11222977 | Source/drain diffusion barrier for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more | 2022-01-11 |
| 11189730 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-11-30 |
| 11164785 | Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material | Ashish Agrawal, Gilbert Dewey, Cheng-Ying Huang, Willy Rachmady, Anand S. Murthy +1 more | 2021-11-02 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-08-24 |
| 11056592 | Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2021-07-06 |