Issued Patents All Time
Showing 26–50 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11367789 | Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs | Cheng-Ying Huang, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +1 more | 2022-06-21 |
| 11257904 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Gilbert Dewey +4 more | 2022-02-22 |
| 11233148 | Reducing band-to-band tunneling in semiconductor devices | Benjamin Chu-Kung, Jack T. Kavalieros, Seung Hoon Sung, Siddharth Chouksey, Dipanjan Basu +4 more | 2022-01-25 |
| 11195919 | Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer | Stephen M. Cea, Roza Kotlyar, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more | 2021-12-07 |
| 11177255 | Transistor structures having multiple threshold voltage channel materials | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Cheng-Ying Huang +3 more | 2021-11-16 |
| 11164974 | Channel layer formed in an art trench | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nancy Zelick, Nicholas G. Minutillo +1 more | 2021-11-02 |
| 11164747 | Group III-V semiconductor devices having asymmetric source and drain structures | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz +3 more | 2021-11-02 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2021-08-24 |
| 11049773 | Art trench spacers to enable fin release for non-lattice matched channels | Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more | 2021-06-29 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Ashish Agrawal, Benjamin Chu-Kung +3 more | 2021-06-01 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung +4 more | 2021-04-20 |
| 10957769 | High-mobility field effect transistors with wide bandgap fin cladding | Sean T. Ma, Chandra S. Mohapatra, Gilbert Dewey, Willy Rachmady, Matthew V. Metz +3 more | 2021-03-23 |
| 10937665 | Methods and apparatus for gettering impurities in semiconductors | Aaron D. Lilak, Patrick Morrow, Rishabh Mehandru, Stephen M. Cea | 2021-03-02 |
| 10892335 | Device isolation by fixed charge | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Justin R. Weber +5 more | 2021-01-12 |
| 10886408 | Group III-V material transistors employing nitride-based dopant diffusion barrier layer | Chandra S. Mohapatra, Glenn A. Glass, Willy Rachmady, Anand S. Murthy, Gilbert Dewey +4 more | 2021-01-05 |
| 10879365 | Transistors with non-vertical gates | Cheng-Ying Huang, Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz +3 more | 2020-12-29 |
| 10861939 | Stiff quantum layers to slow and or stop defect propagation | Matthew V. Metz, Gilbert Dewey, Cheng-Ying Huang, Sean T. Ma, Willy Rachmady | 2020-12-08 |
| 10854752 | High mobility strained channels for fin-based NMOS transistors | Stephen M. Cea, Roza Kotlyar, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more | 2020-12-01 |
| 10818793 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady +3 more | 2020-10-27 |
| 10734488 | Aluminum indium phosphide subfin germanium channel transistors | Matthew V. Metz, Willy Rachmady, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more | 2020-08-04 |
| 10692973 | Germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2020-06-23 |
| 10644112 | Systems, methods and devices for isolation for subfin leakage | Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal +5 more | 2020-05-05 |
| 10573715 | Backside isolation for integrated circuit | Aaron D. Lilak, Rishabh Mehandru, Paul B. Fischer, Stephen M. Cea | 2020-02-25 |
| 10546858 | Low damage self-aligned amphoteric FINFET tip doping | Jack T. Kavalieros, Chandra S. Mohapatra, Anand S. Murthy, Willy Rachmady, Matthew V. Metz +2 more | 2020-01-28 |
| 10529808 | Dopant diffusion barrier for source/drain to curb dopant atom diffusion | Chandra S. Mohapatra, Glenn A. Glass, Will Rachmady, Gilbert Dewey, Jack T. Kavalieros +4 more | 2020-01-07 |