Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors

Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors

US Patent 8435843 · Granted May 7, 2013

Estimated economic value: $10,477,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid dynamic vision sensor and CMOS device for motion compensation2025
Thin film semiconductor material produced through reactive sputtering of zinc ta2020
Method of IGZO and ZnO TFT fabrication with PECVD SiO2 passivation2018
Methods and apparatuses for delaminating process pieces2017
Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation2017
Thin film semiconductors made through low temperature process2016
Buffer layers for metal oxide semiconductors for TFT2016
Thin film metal oxynitride semiconductors2015
TFT with insert in passivation layer or etch stop layer2015
Coffee machine2015
Methods for stable process in a reactive sputtering process using zinc or doped 2014
Capping layers for metal oxynitride TFTs2014